AO4842-MS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AO4842-MS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 2 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 6 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.4 V
Carga de la puerta (Qg): 5.2 nC
Tiempo de subida (tr): 2.5 nS
Conductancia de drenaje-sustrato (Cd): 45 pF
Resistencia entre drenaje y fuente RDS(on): 0.03 Ohm
Paquete / Cubierta: SOP8
Búsqueda de reemplazo de MOSFET AO4842-MS
AO4842-MS Datasheet (PDF)
ao4842-ms.pdf
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ao4842.pdf
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ao4840e.pdf
AO4840E40V Dual N-Channel AlphaMOSGeneral Description Product SummaryVDS Advanced trench technology 40V Low RDS(ON) ID (at VGS=10V) 6A Low Gate Charge RDS(ON) (at VGS=10V)
ao4840.pdf
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