AO4842-MS MOSFET Datasheet: N-Ch, 30V, 6A. Full specification with pinout and replacement list

AO4842-MS Specs and Replacement

Type Designator: AO4842-MS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.5 nS

Cossⓘ - Output Capacitance: 45 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: SOP8

AO4842-MS substitution

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AO4842-MS datasheet

..1. Size:1402K msksemi
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www.msksemi.com AO4842-MS Semiconductor Compiance D1 Product D1 D2 Summary D2 30V VDS I (at V =10V) 6A D GS S1 G1 R (at V =10V) ... See More ⇒

8.1. Size:377K aosemi
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AO4842 AO4842 30V Dual N-Channel MOSFET 30V Dual N-Channel MOSFET General Description Product Summary General Description Product Summary The AO4842 uses advanced trench technology to VDS (V) = 30V The AO4842 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON) and low gate charge. The ID = 7.7A (VGS = 10V) provide excellent RDS(ON) and low gate charge. The ID = 7... See More ⇒

8.2. Size:1610K kexin
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SMD Type MOSFET Dual N-Channel MOSFET AO4842 (KO4842) SOP-8 Unit mm Features VDS (V) = 30V ID = 7.7A (VGS = 10V) 1.50 0.15 RDS(ON) 21m (VGS = 10V) RDS(ON) 30m (VGS = 4.5V) 1 S2 5 D1 6 D1 2 G2 7 D2 3 S1 8 D2 4 G1 D2 D2 D1 D1 G2 G2 G1 G1 S2 S2 S1 S1 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Sourc... See More ⇒

9.1. Size:311K aosemi
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AO4840 40V Dual N-Channel MOSFET General Description Product Summary VDS 40V The AO4840 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate ID (at VGS=10V) 6A charge. This dual device is suitable for use as a load RDS(ON) (at VGS=10V) ... See More ⇒