TN0106 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

TN0106 datasheet

..1. Size:602K supertex
tn0106.pdf pdf_icon

Supertex inc. TN0106 N-Channel Enhancement-Mode Vertical DMOS FET General Description Features This low threshold, enhancement-mode (normally-off) Low threshold - 2.0V max. transistor utilizes a vertical DMOS structure and Supertex s High input impedance well-proven, silicon-gate manufacturing process. This Low input capacitance - 50pF typical combination produces a

9.1. Size:730K supertex
tn0104.pdf pdf_icon

Supertex inc. TN0104 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold (1.6V max.) This low threshold, enhancement-mode (normally-off) transistor High input impedance utilizes a vertical DMOS structure and Supertex s well-proven, Low input capacitance silicon-gate manufacturing process. This combination produces Fast switching sp

9.2. Size:163K ape
ap10tn010cmt.pdf pdf_icon

AP10TN010CMT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100V D Simple Drive Requirement RDS(ON) 10m Lower On-resistance ID 49A G RoHS Compliant & Halogen-Free D S D D Description D AP10TN010C series are from Advanced Power innovated design and silicon process technology to achieve the

Otros transistores... MEM2313 , MEM2402 , MEM4N60THDG , MEM4N60THG , MEM4N60K3G , MEM4N60A3G , MIC94052 , MIC94053 , IRFB31N20D , TN0110 , TN0604 , TN0702 , TN2106K1-G , TN2106N3-G , TN2524 , TP2104K1 , TP2104N3 .