TN0106 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

TN0106 Datasheet (PDF)

..1. Size:602K supertex
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Supertex inc. TN0106N-Channel Enhancement-ModeVertical DMOS FETGeneral DescriptionFeaturesThis low threshold, enhancement-mode (normally-off) Low threshold - 2.0V max.transistor utilizes a vertical DMOS structure and Supertexs High input impedancewell-proven, silicon-gate manufacturing process. This Low input capacitance - 50pF typicalcombination produces a

9.1. Size:730K supertex
tn0104.pdf pdf_icon

Supertex inc. TN0104N-Channel Enhancement-ModeVertical DMOS FETFeatures General Description Low threshold (1.6V max.) This low threshold, enhancement-mode (normally-off) transistor High input impedance utilizes a vertical DMOS structure and Supertexs well-proven, Low input capacitance silicon-gate manufacturing process. This combination produces Fast switching sp

9.2. Size:163K ape
ap10tn010cmt.pdf pdf_icon

AP10TN010CMTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100VD Simple Drive Requirement RDS(ON) 10m Lower On-resistance ID 49AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP10TN010C series are from Advanced Power innovated designand silicon process technology to achieve the

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