All MOSFET. TN0106 Datasheet

 

TN0106 Datasheet and Replacement


   Type Designator: TN0106
   Marking Code: 0106'
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id| ⓘ - Maximum Drain Current: 0.35 A
   Tj ⓘ - Maximum Junction Temperature: 125 °C
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 25 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: TO92
 
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TN0106 Datasheet (PDF)

 ..1. Size:602K  supertex
tn0106.pdf pdf_icon

TN0106

Supertex inc. TN0106N-Channel Enhancement-ModeVertical DMOS FETGeneral DescriptionFeaturesThis low threshold, enhancement-mode (normally-off) Low threshold - 2.0V max.transistor utilizes a vertical DMOS structure and Supertexs High input impedancewell-proven, silicon-gate manufacturing process. This Low input capacitance - 50pF typicalcombination produces a

 9.1. Size:730K  supertex
tn0104.pdf pdf_icon

TN0106

Supertex inc. TN0104N-Channel Enhancement-ModeVertical DMOS FETFeatures General Description Low threshold (1.6V max.) This low threshold, enhancement-mode (normally-off) transistor High input impedance utilizes a vertical DMOS structure and Supertexs well-proven, Low input capacitance silicon-gate manufacturing process. This combination produces Fast switching sp

 9.2. Size:163K  ape
ap10tn010cmt.pdf pdf_icon

TN0106

AP10TN010CMTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100VD Simple Drive Requirement RDS(ON) 10m Lower On-resistance ID 49AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP10TN010C series are from Advanced Power innovated designand silicon process technology to achieve the

Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRF1405 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

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