BSS123LT1G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BSS123LT1G  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.225 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 0.17 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 9 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 6 Ohm

Encapsulados: SOT23

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BSS123LT1G datasheet

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BSS123LT1G

BSS123LT1G, BVSS123LT1G Power MOSFET 170 mAmps, 100 Volts N-Channel SOT-23 http //onsemi.com Features 170 mAMPS BVSS Prefix for Automotive and Other Applications Requiring 100 VOLTS Unique Site and Control Change Requirements; AEC-Q101 RDS(on) = 6 W Qualified and PPAP Capable N-Channel These Devices are Pb-Free and are RoHS Compliant 3 MAXIMUM RATINGS Rating Symbol Value

 0.1. Size:360K  lrc
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BSS123LT1G

LESHAN RADIO COMPANY, LTD. N-CHANNEL POWER MOSFET LBSS123LT1G LBSS123LT1G S-LBSS123LT1G FEATURE 3 Pb-Free Package is available. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 1 DEVICE MARKING AND ORDERING INFORMATION 2 SOT-23 Device Marking Shipping LBSS123LT1G 3000/Tape&Reel SA

 5.1. Size:93K  motorola
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BSS123LT1G

 5.2. Size:58K  philips
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BSS123LT1G

BSS123LT1 Preferred Device Power MOSFET 170 mAmps, 100 Volts N-Channel SOT-23 http //onsemi.com Features Pb-Free Packages are Available 170 mAMPS 100 VOLTS RDS(on) = 6 W N-Channel 3 MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 100 Vdc Gate-Source Voltage 1 - Continuous VGS 20 Vdc - Non-repetitive (tp 50 ms) VGSM 40 Vpk Drain Current Adc 2 -

Otros transistores... SIL3724, P1025HDB, P1825HDB, PA910BD, PK501BA, PK537BA, PK650DY, PKCH2BB, 7N60, BVSS123LT1G, EFC2J004NUZ, EFC2J013NUZ, EFC2K101NUZ, EFC2K103NUZ, EFC2K107NUZ, EFC3C001NUZ, EFC4C002NL