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BSS123LT1G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BSS123LT1G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.225 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.17 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 9 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 6 Ohm
   Paquete / Cubierta: SOT23
 

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BSS123LT1G Datasheet (PDF)

 ..1. Size:109K  onsemi
bss123lt1g bvss123lt1g.pdf pdf_icon

BSS123LT1G

BSS123LT1G,BVSS123LT1GPower MOSFET170 mAmps, 100 VoltsN-Channel SOT-23http://onsemi.comFeatures 170 mAMPS BVSS Prefix for Automotive and Other Applications Requiring100 VOLTSUnique Site and Control Change Requirements; AEC-Q101RDS(on) = 6 WQualified and PPAP CapableN-Channel These Devices are Pb-Free and are RoHS Compliant3MAXIMUM RATINGSRating Symbol Value

 0.1. Size:360K  lrc
lbss123lt1g s-lbss123lt1g.pdf pdf_icon

BSS123LT1G

LESHAN RADIO COMPANY, LTD.N-CHANNEL POWER MOSFETLBSS123LT1GLBSS123LT1GS-LBSS123LT1GFEATURE3 Pb-Free Package is available. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.1DEVICE MARKING AND ORDERING INFORMATION2SOT-23Device Marking Shipping LBSS123LT1G3000/Tape&ReelSA

 5.1. Size:93K  motorola
bss123lt1rev2x.pdf pdf_icon

BSS123LT1G

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BSS123LT1/DTMOS FET TransistorBSS123LT1NChannel3 DRAINMotorola Preferred Device1GATE32 SOURCE1MAXIMUM RATINGS2Rating Symbol Value UnitDrainSource Voltage VDSS 100 VdcCASE 31808, STYLE 21SOT23 (TO236AB)GateSource Voltage Continuous VGS 20 Vdc Nonrepetitive (tp

 5.2. Size:58K  philips
bss123lt1-d.pdf pdf_icon

BSS123LT1G

BSS123LT1Preferred DevicePower MOSFET170 mAmps, 100 VoltsN-Channel SOT-23http://onsemi.comFeatures Pb-Free Packages are Available170 mAMPS100 VOLTSRDS(on) = 6 WN-Channel3MAXIMUM RATINGSRating Symbol Value UnitDrain-Source Voltage VDSS 100 VdcGate-Source Voltage 1- Continuous VGS 20 Vdc- Non-repetitive (tp 50 ms) VGSM 40 VpkDrain Current Adc2-

Otros transistores... SIL3724 , P1025HDB , P1825HDB , PA910BD , PK501BA , PK537BA , PK650DY , PKCH2BB , MMIS60R580P , BVSS123LT1G , EFC2J004NUZ , EFC2J013NUZ , EFC2K101NUZ , EFC2K103NUZ , EFC2K107NUZ , EFC3C001NUZ , EFC4C002NL .

History: WNMD2178 | IRFR9214PBF | RCJ450N20 | NTBLS002N08MC | NTZD3154NT1G | SE12N50FRA | IRFP9233

 

 
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