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BSS123LT1G MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: BSS123LT1G
   Маркировка: SA*
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.225 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.6 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.17 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Cossⓘ - Выходная емкость: 9 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 6 Ohm
   Тип корпуса: SOT23

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BSS123LT1G Datasheet (PDF)

 ..1. Size:109K  onsemi
 bss123lt1g bvss123lt1g.pdf

BSS123LT1G BSS123LT1G

BSS123LT1G,BVSS123LT1GPower MOSFET170 mAmps, 100 VoltsN-Channel SOT-23http://onsemi.comFeatures 170 mAMPS BVSS Prefix for Automotive and Other Applications Requiring100 VOLTSUnique Site and Control Change Requirements; AEC-Q101RDS(on) = 6 WQualified and PPAP CapableN-Channel These Devices are Pb-Free and are RoHS Compliant3MAXIMUM RATINGSRating Symbol Value

 0.1. Size:360K  lrc
 lbss123lt1g s-lbss123lt1g.pdf

BSS123LT1G BSS123LT1G

LESHAN RADIO COMPANY, LTD.N-CHANNEL POWER MOSFETLBSS123LT1GLBSS123LT1GS-LBSS123LT1GFEATURE3 Pb-Free Package is available. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.1DEVICE MARKING AND ORDERING INFORMATION2SOT-23Device Marking Shipping LBSS123LT1G3000/Tape&ReelSA

 5.1. Size:93K  motorola
 bss123lt1rev2x.pdf

BSS123LT1G BSS123LT1G

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BSS123LT1/DTMOS FET TransistorBSS123LT1NChannel3 DRAINMotorola Preferred Device1GATE32 SOURCE1MAXIMUM RATINGS2Rating Symbol Value UnitDrainSource Voltage VDSS 100 VdcCASE 31808, STYLE 21SOT23 (TO236AB)GateSource Voltage Continuous VGS 20 Vdc Nonrepetitive (tp

 5.2. Size:58K  philips
 bss123lt1-d.pdf

BSS123LT1G BSS123LT1G

BSS123LT1Preferred DevicePower MOSFET170 mAmps, 100 VoltsN-Channel SOT-23http://onsemi.comFeatures Pb-Free Packages are Available170 mAMPS100 VOLTSRDS(on) = 6 WN-Channel3MAXIMUM RATINGSRating Symbol Value UnitDrain-Source Voltage VDSS 100 VdcGate-Source Voltage 1- Continuous VGS 20 Vdc- Non-repetitive (tp 50 ms) VGSM 40 VpkDrain Current Adc2-

 5.3. Size:363K  willas
 bss123lt1.pdf

BSS123LT1G BSS123LT1G

FM120-M WILLASTHRUBSS123LT1FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VN-CHANNEL POWER MOSFETSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to optimize board s

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