BSS123LT1G Specs and Replacement
Type Designator: BSS123LT1G
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.225 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.17 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 9 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 6 Ohm
Package: SOT23
BSS123LT1G substitution
- MOSFET ⓘ Cross-Reference Search
BSS123LT1G datasheet
bss123lt1g bvss123lt1g.pdf
BSS123LT1G, BVSS123LT1G Power MOSFET 170 mAmps, 100 Volts N-Channel SOT-23 http //onsemi.com Features 170 mAMPS BVSS Prefix for Automotive and Other Applications Requiring 100 VOLTS Unique Site and Control Change Requirements; AEC-Q101 RDS(on) = 6 W Qualified and PPAP Capable N-Channel These Devices are Pb-Free and are RoHS Compliant 3 MAXIMUM RATINGS Rating Symbol Value... See More ⇒
lbss123lt1g s-lbss123lt1g.pdf
LESHAN RADIO COMPANY, LTD. N-CHANNEL POWER MOSFET LBSS123LT1G LBSS123LT1G S-LBSS123LT1G FEATURE 3 Pb-Free Package is available. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 1 DEVICE MARKING AND ORDERING INFORMATION 2 SOT-23 Device Marking Shipping LBSS123LT1G 3000/Tape&Reel SA ... See More ⇒
bss123lt1-d.pdf
BSS123LT1 Preferred Device Power MOSFET 170 mAmps, 100 Volts N-Channel SOT-23 http //onsemi.com Features Pb-Free Packages are Available 170 mAMPS 100 VOLTS RDS(on) = 6 W N-Channel 3 MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 100 Vdc Gate-Source Voltage 1 - Continuous VGS 20 Vdc - Non-repetitive (tp 50 ms) VGSM 40 Vpk Drain Current Adc 2 -... See More ⇒
Detailed specifications: SIL3724, P1025HDB, P1825HDB, PA910BD, PK501BA, PK537BA, PK650DY, PKCH2BB, 7N60, BVSS123LT1G, EFC2J004NUZ, EFC2J013NUZ, EFC2K101NUZ, EFC2K103NUZ, EFC2K107NUZ, EFC3C001NUZ, EFC4C002NL
Keywords - BSS123LT1G MOSFET specs
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