FCP190N65S3R0 Todos los transistores

 

FCP190N65S3R0 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FCP190N65S3R0

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 144 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 17 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 16 nS

Cossⓘ - Capacitancia de salida: 30 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm

Encapsulados: TO220

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FCP190N65S3R0 datasheet

 ..1. Size:357K  onsemi
fcp190n65s3r0.pdf pdf_icon

FCP190N65S3R0

FCP190N65S3R0 MOSFET Power, N-Channel, SUPERFET III, Easy Drive 650 V, 17 A, 190 mW Description www.onsemi.com SUPERFET III MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate VDSS RDS(ON) MAX ID MAX charge performance. This advanced technology is tailor

 3.1. Size:373K  onsemi
fcp190n65s3.pdf pdf_icon

FCP190N65S3R0

FCP190N65S3 MOSFET Power, N-Channel, SUPERFET III, Easy Drive 650 V, 17 A, 190 mW Description www.onsemi.com SUPERFET III MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge VDSS RDS(ON) MAX ID MAX balance technology for outstanding low on-resistance and lower gate 650 V 190 mW @ 10 V 17 A charge performance. This advanc

 3.2. Size:207K  inchange semiconductor
fcp190n65s3.pdf pdf_icon

FCP190N65S3R0

INCHANGE Semiconductor isc N-Channel MOSFET Transistor FCP190N65S3 FEATURES With TO-220 packaging High speed switching Very high commutation ruggedness Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS PFC stages LCD & PDP TV Power supply Switching applications ABSOLUTE MAXI

 5.1. Size:998K  fairchild semi
fcp190n65f.pdf pdf_icon

FCP190N65S3R0

August 2014 FCP190N65F N-Channel SuperFET II FRFET MOSFET 650 V, 20.6 A, 190 m Features Description 700 V @ TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 168 m charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 60 nC)

Otros transistores... FCMT099N65S3 , FCMT125N65S3 , FCMT180N65S3 , FCMT250N65S3 , FCP125N65S3R0 , FCP165N65S3 , FCP165N65S3R0 , FCP190N60_GF102 , IRFB4227 , FCP220N80 , FCP360N65S3R0 , FCP400N80Z , FCP600N65S3R0 , FCPF165N65S3R0L , FCPF190N60-F152 , FCPF190N65S3L1 , FCPF190N65S3R0L .

 

 

 


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