FCP190N65S3R0 Specs and Replacement
Type Designator: FCP190N65S3R0
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 144 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 17 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 30 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
Package: TO220
FCP190N65S3R0 substitution
- MOSFET ⓘ Cross-Reference Search
FCP190N65S3R0 datasheet
fcp190n65s3r0.pdf
FCP190N65S3R0 MOSFET Power, N-Channel, SUPERFET III, Easy Drive 650 V, 17 A, 190 mW Description www.onsemi.com SUPERFET III MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate VDSS RDS(ON) MAX ID MAX charge performance. This advanced technology is tailor... See More ⇒
fcp190n65s3.pdf
FCP190N65S3 MOSFET Power, N-Channel, SUPERFET III, Easy Drive 650 V, 17 A, 190 mW Description www.onsemi.com SUPERFET III MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge VDSS RDS(ON) MAX ID MAX balance technology for outstanding low on-resistance and lower gate 650 V 190 mW @ 10 V 17 A charge performance. This advanc... See More ⇒
fcp190n65s3.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor FCP190N65S3 FEATURES With TO-220 packaging High speed switching Very high commutation ruggedness Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS PFC stages LCD & PDP TV Power supply Switching applications ABSOLUTE MAXI... See More ⇒
fcp190n65f.pdf
August 2014 FCP190N65F N-Channel SuperFET II FRFET MOSFET 650 V, 20.6 A, 190 m Features Description 700 V @ TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 168 m charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 60 nC) ... See More ⇒
Detailed specifications: FCMT099N65S3, FCMT125N65S3, FCMT180N65S3, FCMT250N65S3, FCP125N65S3R0, FCP165N65S3, FCP165N65S3R0, FCP190N60_GF102, IRFB4227, FCP220N80, FCP360N65S3R0, FCP400N80Z, FCP600N65S3R0, FCPF165N65S3R0L, FCPF190N60-F152, FCPF190N65S3L1, FCPF190N65S3R0L
Keywords - FCP190N65S3R0 MOSFET specs
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