FCPF165N65S3R0L Todos los transistores

 

FCPF165N65S3R0L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FCPF165N65S3R0L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 19 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.5 V
   Qgⓘ - Carga de la puerta: 35 nC
   trⓘ - Tiempo de subida: 16 nS
   Cossⓘ - Capacitancia de salida: 35 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.165 Ohm
   Paquete / Cubierta: TO220F

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FCPF165N65S3R0L Datasheet (PDF)

 0.1. Size:328K  onsemi
fcpf165n65s3r0l.pdf

FCPF165N65S3R0L
FCPF165N65S3R0L

FCPF165N65S3R0LMOSFET Power, N-Channel,SUPERFET III, Easy Drive650 V, 19 A, 165 mWDescriptionwww.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gateVDS RDS(ON) MAX ID MAXcharge performance. This advanced technology is tailo

 2.1. Size:289K  1
fcpf165n65s3l1.pdf

FCPF165N65S3R0L
FCPF165N65S3R0L

FCPF165N65S3L1MOSFET Power, N-Channel,SUPERFET III, Easy Drive650 V, 19 A, 165 mWDescription www.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargeVDSS RDS(ON) MAX ID MAXbalance technology for outstanding low on-resistance and lower gate650 V 165 mW @ 10 V 19 Acharge performance. This adv

 2.2. Size:320K  onsemi
fcpf165n65s3l1.pdf

FCPF165N65S3R0L
FCPF165N65S3R0L

FCPF165N65S3L1MOSFET Power, N-Channel,SUPERFET III, Easy Drive650 V, 19 A, 165 mWDescription www.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargeVDSS RDS(ON) MAX ID MAXbalance technology for outstanding low on-resistance and lower gate650 V 165 mW @ 10 V 19 Acharge performance. This adv

 2.3. Size:247K  inchange semiconductor
fcpf165n65s3l1.pdf

FCPF165N65S3R0L
FCPF165N65S3R0L

isc N-Channel MOSFET Transistor FCPF165N65S3L1FEATURESWith TO-220F packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYM

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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