FCPF165N65S3R0L Todos los transistores

 

FCPF165N65S3R0L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FCPF165N65S3R0L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 19 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 16 nS
   Cossⓘ - Capacitancia de salida: 35 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.165 Ohm
   Paquete / Cubierta: TO220F
 

 Búsqueda de reemplazo de FCPF165N65S3R0L MOSFET

   - Selección ⓘ de transistores por parámetros

 

FCPF165N65S3R0L Datasheet (PDF)

 0.1. Size:328K  onsemi
 fcpf165n65s3r0l.pdf pdf_icon

FCPF165N65S3R0L

FCPF165N65S3R0LMOSFET Power, N-Channel,SUPERFET III, Easy Drive650 V, 19 A, 165 mWDescriptionwww.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gateVDS RDS(ON) MAX ID MAXcharge performance. This advanced technology is tailo

 2.1. Size:289K  1
 fcpf165n65s3l1.pdf pdf_icon

FCPF165N65S3R0L

FCPF165N65S3L1MOSFET Power, N-Channel,SUPERFET III, Easy Drive650 V, 19 A, 165 mWDescription www.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargeVDSS RDS(ON) MAX ID MAXbalance technology for outstanding low on-resistance and lower gate650 V 165 mW @ 10 V 19 Acharge performance. This adv

 2.2. Size:320K  onsemi
 fcpf165n65s3l1.pdf pdf_icon

FCPF165N65S3R0L

FCPF165N65S3L1MOSFET Power, N-Channel,SUPERFET III, Easy Drive650 V, 19 A, 165 mWDescription www.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargeVDSS RDS(ON) MAX ID MAXbalance technology for outstanding low on-resistance and lower gate650 V 165 mW @ 10 V 19 Acharge performance. This adv

 2.3. Size:247K  inchange semiconductor
 fcpf165n65s3l1.pdf pdf_icon

FCPF165N65S3R0L

isc N-Channel MOSFET Transistor FCPF165N65S3L1FEATURESWith TO-220F packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYM

MOSTRAR MÁS

Otros transistores... FCP165N65S3 , FCP165N65S3R0 , FCP190N60_GF102 , FCP190N65S3R0 , FCP220N80 , FCP360N65S3R0 , FCP400N80Z , FCP600N65S3R0 , IRFP250N , FCPF190N60-F152 , FCPF190N65S3L1 , FCPF190N65S3R0L , FCPF250N65S3R0L , FCPF360N65S3R0L , FCPF36N60NT , FCPF380N60_F152 , FCPF600N60ZL1 .

History: STI270N4F3 | NCE55P05S | STI30N65M5 | WVM55N10 | AOTF380A60CL | FCPF250N65S3R0L

 

 
Back to Top

 


 
.