All MOSFET. FCPF165N65S3R0L Datasheet

 

FCPF165N65S3R0L MOSFET. Datasheet pdf. Equivalent


   Type Designator: FCPF165N65S3R0L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 19 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 35 nC
   trⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 35 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.165 Ohm
   Package: TO220F

 FCPF165N65S3R0L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FCPF165N65S3R0L Datasheet (PDF)

 0.1. Size:328K  onsemi
 fcpf165n65s3r0l.pdf

FCPF165N65S3R0L FCPF165N65S3R0L

FCPF165N65S3R0LMOSFET Power, N-Channel,SUPERFET III, Easy Drive650 V, 19 A, 165 mWDescriptionwww.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gateVDS RDS(ON) MAX ID MAXcharge performance. This advanced technology is tailo

 2.1. Size:289K  1
 fcpf165n65s3l1.pdf

FCPF165N65S3R0L FCPF165N65S3R0L

FCPF165N65S3L1MOSFET Power, N-Channel,SUPERFET III, Easy Drive650 V, 19 A, 165 mWDescription www.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargeVDSS RDS(ON) MAX ID MAXbalance technology for outstanding low on-resistance and lower gate650 V 165 mW @ 10 V 19 Acharge performance. This adv

 2.2. Size:320K  onsemi
 fcpf165n65s3l1.pdf

FCPF165N65S3R0L FCPF165N65S3R0L

FCPF165N65S3L1MOSFET Power, N-Channel,SUPERFET III, Easy Drive650 V, 19 A, 165 mWDescription www.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargeVDSS RDS(ON) MAX ID MAXbalance technology for outstanding low on-resistance and lower gate650 V 165 mW @ 10 V 19 Acharge performance. This adv

 2.3. Size:247K  inchange semiconductor
 fcpf165n65s3l1.pdf

FCPF165N65S3R0L FCPF165N65S3R0L

isc N-Channel MOSFET Transistor FCPF165N65S3L1FEATURESWith TO-220F packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYM

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