FCPF250N65S3R0L MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FCPF250N65S3R0L
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 31 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 12 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 13 nS
Cossⓘ - Capacitancia de salida: 25 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.25 Ohm
Encapsulados: TO220F
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FCPF250N65S3R0L datasheet
fcpf250n65s3r0l.pdf
FCPF250N65S3R0L MOSFET Power, N-Channel, SUPERFET III, Easy Drive 650 V, 12 A, 250 mW Description www.onsemi.com SUPERFET III MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate VDSS RDS(ON) MAX ID MAX charge performance. This advanced technology is tail
fcpf250n65s3l1.pdf
FCPF250N65S3L1 MOSFET Power, N-Channel, SUPERFET III, Easy Drive 650 V, 12 A, 250 mW Description www.onsemi.com SUPERFET III MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate VDSS RDS(ON) MAX ID MAX charge performance. This advanced technology is tailo
fcpf250n65s3l1.pdf
FCPF250N65S3L1 Power MOSFET, N-Channel, SUPERFET) III, Easy Drive, 650 V, 12 A, 250 mW Description www.onsemi.com SUPERFET III MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge VDSS RDS(ON) MAX ID MAX balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailore
fcpf250n65s3.pdf
isc N-Channel MOSFET Transistor FCPF250N65S3 FEATURES Drain-source on-resistance RDS(on) 250m @10V Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High fast switching Power Supply ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 6
Otros transistores... FCP220N80 , FCP360N65S3R0 , FCP400N80Z , FCP600N65S3R0 , FCPF165N65S3R0L , FCPF190N60-F152 , FCPF190N65S3L1 , FCPF190N65S3R0L , IRFP250N , FCPF360N65S3R0L , FCPF36N60NT , FCPF380N60_F152 , FCPF600N60ZL1 , FCPF600N65S3R0L , FCU360N65S3R0 , FCU600N65S3R0 , FDB0105N407L .
History: FDMC8884 | AP83T03K
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