FCPF250N65S3R0L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FCPF250N65S3R0L
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 31 W
Voltaje máximo drenador - fuente |Vds|: 650 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 12 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4.5 V
Carga de la puerta (Qg): 24 nC
Tiempo de subida (tr): 13 nS
Conductancia de drenaje-sustrato (Cd): 25 pF
Resistencia entre drenaje y fuente RDS(on): 0.25 Ohm
Paquete / Cubierta: TO220F
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FCPF250N65S3R0L Datasheet (PDF)
fcpf250n65s3r0l.pdf
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FCPF250N65S3R0LMOSFET Power, N-Channel,SUPERFET III, Easy Drive650 V, 12 A, 250 mWDescriptionwww.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gateVDSS RDS(ON) MAX ID MAXcharge performance. This advanced technology is tail
fcpf250n65s3l1.pdf
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FCPF250N65S3L1MOSFET Power, N-Channel,SUPERFET III, Easy Drive650 V, 12 A, 250 mWDescriptionwww.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gateVDSS RDS(ON) MAX ID MAXcharge performance. This advanced technology is tailo
fcpf250n65s3l1.pdf
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FCPF250N65S3L1Power MOSFET, N-Channel,SUPERFET) III, Easy Drive,650 V, 12 A, 250 mWDescriptionwww.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargeVDSS RDS(ON) MAX ID MAXbalance technology for outstanding low on-resistance and lower gatecharge performance. This advanced technology is tailore
fcpf250n65s3.pdf
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isc N-Channel MOSFET Transistor FCPF250N65S3FEATURES Drain-source on-resistance:RDS(on) 250m@10VFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh fast switching Power SupplyABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 6
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