All MOSFET. FCPF250N65S3R0L Datasheet

 

FCPF250N65S3R0L MOSFET. Datasheet pdf. Equivalent


   Type Designator: FCPF250N65S3R0L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 31 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 24 nC
   trⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 25 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
   Package: TO220F

 FCPF250N65S3R0L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FCPF250N65S3R0L Datasheet (PDF)

 0.1. Size:298K  onsemi
 fcpf250n65s3r0l.pdf

FCPF250N65S3R0L FCPF250N65S3R0L

FCPF250N65S3R0LMOSFET Power, N-Channel,SUPERFET III, Easy Drive650 V, 12 A, 250 mWDescriptionwww.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gateVDSS RDS(ON) MAX ID MAXcharge performance. This advanced technology is tail

 2.1. Size:266K  1
 fcpf250n65s3l1.pdf

FCPF250N65S3R0L FCPF250N65S3R0L

FCPF250N65S3L1MOSFET Power, N-Channel,SUPERFET III, Easy Drive650 V, 12 A, 250 mWDescriptionwww.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gateVDSS RDS(ON) MAX ID MAXcharge performance. This advanced technology is tailo

 2.2. Size:275K  onsemi
 fcpf250n65s3l1.pdf

FCPF250N65S3R0L FCPF250N65S3R0L

FCPF250N65S3L1Power MOSFET, N-Channel,SUPERFET) III, Easy Drive,650 V, 12 A, 250 mWDescriptionwww.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargeVDSS RDS(ON) MAX ID MAXbalance technology for outstanding low on-resistance and lower gatecharge performance. This advanced technology is tailore

 2.3. Size:236K  inchange semiconductor
 fcpf250n65s3.pdf

FCPF250N65S3R0L FCPF250N65S3R0L

isc N-Channel MOSFET Transistor FCPF250N65S3FEATURES Drain-source on-resistance:RDS(on) 250m@10VFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh fast switching Power SupplyABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 6

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
Back to Top