FDB0260N1007L Todos los transistores

 

FDB0260N1007L MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDB0260N1007L

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 250 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 200 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 29 nS

Cossⓘ - Capacitancia de salida: 1343 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0026 Ohm

Encapsulados: D2-PAK-7L

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FDB0260N1007L datasheet

 ..1. Size:402K  onsemi
fdb0260n1007l.pdf pdf_icon

FDB0260N1007L

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.1. Size:505K  fairchild semi
fdb029n06.pdf pdf_icon

FDB0260N1007L

June 2009 FDB029N06 N-Channel PowerTrench MOSFET 60V, 193A, 3.1m Features Description RDS(on) = 2.4m ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s advanced PowerTrench process that has been espe- Fast Switching Speed cially tailored to minimize the on-state resistance and yet maintain superior switching performance.

 9.2. Size:675K  fairchild semi
fdb024n08bl7.pdf pdf_icon

FDB0260N1007L

June 2014 FDB024N08BL7 N-Channel PowerTrench MOSFET 80 V, 229 A, 2.4 m Features Description RDS(on) = 1.7 m ( Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advance PowerTrench process that has been Low FOM RDS(on) *QG tailored to minimize the on-state resistance while maintaining superior switching performance.

 9.3. Size:614K  fairchild semi
fdb024n06.pdf pdf_icon

FDB0260N1007L

July 2008 FDB024N06 tm N-Channel PowerTrench MOSFET 60V, 265A, 2.4m Features General Description RDS(on) = 1.8m ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has been Fast switching speed especially tailored to minimize the on-state resistance and yet maintain superior switching p

Otros transistores... FCPF600N60ZL1 , FCPF600N65S3R0L , FCU360N65S3R0 , FCU600N65S3R0 , FDB0105N407L , FDB0165N807L , FDB0170N607L , FDB0190N807L , IRFP260 , FDB0300N1007L , FDB045AN08A0-F085 , FDB0630N1507L , FDB0690N1507L , FDB070AN06A0-F085 , FDB075N15A-F085 , FDB14AN06LA0-F085 , FDB1D7N10CL7 .

History: TK39J60W5 | XP161A11A1PR-G | AP3N2R8H | NCEP40T11G

 

 

 


History: TK39J60W5 | XP161A11A1PR-G | AP3N2R8H | NCEP40T11G

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