FDB0260N1007L PDF and Equivalents Search

 

FDB0260N1007L Specs and Replacement

Type Designator: FDB0260N1007L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 200 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 29 nS

Cossⓘ - Output Capacitance: 1343 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm

Package: D2-PAK-7L

FDB0260N1007L substitution

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FDB0260N1007L datasheet

 ..1. Size:402K  onsemi
fdb0260n1007l.pdf pdf_icon

FDB0260N1007L

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 9.1. Size:505K  fairchild semi
fdb029n06.pdf pdf_icon

FDB0260N1007L

June 2009 FDB029N06 N-Channel PowerTrench MOSFET 60V, 193A, 3.1m Features Description RDS(on) = 2.4m ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s advanced PowerTrench process that has been espe- Fast Switching Speed cially tailored to minimize the on-state resistance and yet maintain superior switching performance. ... See More ⇒

 9.2. Size:675K  fairchild semi
fdb024n08bl7.pdf pdf_icon

FDB0260N1007L

June 2014 FDB024N08BL7 N-Channel PowerTrench MOSFET 80 V, 229 A, 2.4 m Features Description RDS(on) = 1.7 m ( Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advance PowerTrench process that has been Low FOM RDS(on) *QG tailored to minimize the on-state resistance while maintaining superior switching performance. ... See More ⇒

 9.3. Size:614K  fairchild semi
fdb024n06.pdf pdf_icon

FDB0260N1007L

July 2008 FDB024N06 tm N-Channel PowerTrench MOSFET 60V, 265A, 2.4m Features General Description RDS(on) = 1.8m ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has been Fast switching speed especially tailored to minimize the on-state resistance and yet maintain superior switching p... See More ⇒

Detailed specifications: FCPF600N60ZL1, FCPF600N65S3R0L, FCU360N65S3R0, FCU600N65S3R0, FDB0105N407L, FDB0165N807L, FDB0170N607L, FDB0190N807L, IRFP260, FDB0300N1007L, FDB045AN08A0-F085, FDB0630N1507L, FDB0690N1507L, FDB070AN06A0-F085, FDB075N15A-F085, FDB14AN06LA0-F085, FDB1D7N10CL7

Keywords - FDB0260N1007L MOSFET specs

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