All MOSFET. FDB0260N1007L Datasheet

 

FDB0260N1007L Datasheet and Replacement


   Type Designator: FDB0260N1007L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 200 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 29 nS
   Cossⓘ - Output Capacitance: 1343 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm
   Package: D2-PAK-7L
      - MOSFET Cross-Reference Search

 

FDB0260N1007L Datasheet (PDF)

 ..1. Size:402K  onsemi
fdb0260n1007l.pdf pdf_icon

FDB0260N1007L

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.1. Size:505K  fairchild semi
fdb029n06.pdf pdf_icon

FDB0260N1007L

June 2009FDB029N06 N-Channel PowerTrench MOSFET60V, 193A, 3.1mFeatures Description RDS(on) = 2.4m ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semicon-ductors advanced PowerTrench process that has been espe- Fast Switching Speedcially tailored to minimize the on-state resistance and yetmaintain superior switching performance.

 9.2. Size:675K  fairchild semi
fdb024n08bl7.pdf pdf_icon

FDB0260N1007L

June 2014FDB024N08BL7 N-Channel PowerTrench MOSFET80 V, 229 A, 2.4 mFeatures Description RDS(on) = 1.7 m ( Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using FairchildSemiconductors advance PowerTrench process that has been Low FOM RDS(on) *QGtailored to minimize the on-state resistance while maintainingsuperior switching performance.

 9.3. Size:614K  fairchild semi
fdb024n06.pdf pdf_icon

FDB0260N1007L

July 2008FDB024N06tmN-Channel PowerTrench MOSFET 60V, 265A, 2.4mFeatures General Description RDS(on) = 1.8m ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that has been Fast switching speed especially tailored to minimize the on-state resistance and yet maintain superior switching p

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: FCPF7N60YDTU | SM6A12NSFP | AP6679GI-HF | H7N1002LM | SPD04N60S5

Keywords - FDB0260N1007L MOSFET datasheet

 FDB0260N1007L cross reference
 FDB0260N1007L equivalent finder
 FDB0260N1007L lookup
 FDB0260N1007L substitution
 FDB0260N1007L replacement

 

 
Back to Top

 


 
.