FDB0260N1007L Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: FDB0260N1007L
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 250 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 200 A
Tjⓘ - Максимальная температура канала: 175 °C
trⓘ - Время нарастания: 29 ns
Cossⓘ - Выходная емкость: 1343 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0026 Ohm
Тип корпуса: D2-PAK-7L
- подбор MOSFET транзистора по параметрам
FDB0260N1007L Datasheet (PDF)
fdb0260n1007l.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdb029n06.pdf

June 2009FDB029N06 N-Channel PowerTrench MOSFET60V, 193A, 3.1mFeatures Description RDS(on) = 2.4m ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semicon-ductors advanced PowerTrench process that has been espe- Fast Switching Speedcially tailored to minimize the on-state resistance and yetmaintain superior switching performance.
fdb024n08bl7.pdf

June 2014FDB024N08BL7 N-Channel PowerTrench MOSFET80 V, 229 A, 2.4 mFeatures Description RDS(on) = 1.7 m ( Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using FairchildSemiconductors advance PowerTrench process that has been Low FOM RDS(on) *QGtailored to minimize the on-state resistance while maintainingsuperior switching performance.
fdb024n06.pdf

July 2008FDB024N06tmN-Channel PowerTrench MOSFET 60V, 265A, 2.4mFeatures General Description RDS(on) = 1.8m ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that has been Fast switching speed especially tailored to minimize the on-state resistance and yet maintain superior switching p
Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: HM4806B | 2SJ424 | DMG9926USD | BL7N80-B | IPB031NE7N3G | FHP13N50C | CS9640
History: HM4806B | 2SJ424 | DMG9926USD | BL7N80-B | IPB031NE7N3G | FHP13N50C | CS9640



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