FDB0260N1007L. Аналоги и основные параметры
Наименование производителя: FDB0260N1007L
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 250 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 200 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 29 ns
Cossⓘ - Выходная емкость: 1343 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0026 Ohm
Тип корпуса: D2-PAK-7L
Аналог (замена) для FDB0260N1007L
- подборⓘ MOSFET транзистора по параметрам
FDB0260N1007L даташит
fdb0260n1007l.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdb029n06.pdf
June 2009 FDB029N06 N-Channel PowerTrench MOSFET 60V, 193A, 3.1m Features Description RDS(on) = 2.4m ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s advanced PowerTrench process that has been espe- Fast Switching Speed cially tailored to minimize the on-state resistance and yet maintain superior switching performance.
fdb024n08bl7.pdf
June 2014 FDB024N08BL7 N-Channel PowerTrench MOSFET 80 V, 229 A, 2.4 m Features Description RDS(on) = 1.7 m ( Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advance PowerTrench process that has been Low FOM RDS(on) *QG tailored to minimize the on-state resistance while maintaining superior switching performance.
fdb024n06.pdf
July 2008 FDB024N06 tm N-Channel PowerTrench MOSFET 60V, 265A, 2.4m Features General Description RDS(on) = 1.8m ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has been Fast switching speed especially tailored to minimize the on-state resistance and yet maintain superior switching p
Другие MOSFET... FCPF600N60ZL1 , FCPF600N65S3R0L , FCU360N65S3R0 , FCU600N65S3R0 , FDB0105N407L , FDB0165N807L , FDB0170N607L , FDB0190N807L , IRFP260 , FDB0300N1007L , FDB045AN08A0-F085 , FDB0630N1507L , FDB0690N1507L , FDB070AN06A0-F085 , FDB075N15A-F085 , FDB14AN06LA0-F085 , FDB1D7N10CL7 .
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Список транзисторов
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