FDB0630N1507L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDB0630N1507L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 300 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 130 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 97 nC
   trⓘ - Tiempo de subida: 31 nS
   Cossⓘ - Capacitancia de salida: 552 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0064 Ohm
   Paquete / Cubierta: D2-PAK-7L

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FDB0630N1507L Datasheet (PDF)

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fdb0630n1507l.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

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fdb060an08a0 fdp060an08a0.pdf

November 2002FDB060AN08A0 / FDP060AN08A0N-Channel PowerTrench MOSFET75V, 80A, 6.0mFeatures Applications rDS(ON) = 4.8m (Typ.), VGS = 10V, ID = 80A 42V Automotive Load Control Qg(tot) = 73nC (Typ.), VGS = 10V Starter / Alternator Systems Low Miller Charge Electronic Power Steering Systems Low QRR Body Diode Electronic Valve Train Systems U

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fdb0690n1507l.pdf

FDB0690N1507LN-Channel PowerTrench MOSFET150 V, 115 A, 6.9 mGeneral DescriptionFeaturesThis N-Channel MOSFET is produced using ON Max rDS(on) = 6.9 m at VGS = 10 V, ID = 17 A Semiconductors advance PowerTrench process that has been especially tailored to minimize the on-state resistance Fast Switching Speedwhile maintaining superior ruggedness and switchingperfor

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9.4. Size:277K inchange semiconductor
fdb060an08a0.pdf

isc N-Channel MOSFET Transistor FDB060AN08A0FEATURESWith TO-263 packagingDrain Source Voltage-: V 75VDSSStatic drain-source on-resistance:RDS(on) 6m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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