Справочник MOSFET. FDB0630N1507L

 

FDB0630N1507L MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FDB0630N1507L
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 300 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 130 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 97 nC
   trⓘ - Время нарастания: 31 ns
   Cossⓘ - Выходная емкость: 552 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0064 Ohm
   Тип корпуса: D2-PAK-7L

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FDB0630N1507L Datasheet (PDF)

 ..1. Size:406K  onsemi
 fdb0630n1507l.pdf

FDB0630N1507L FDB0630N1507L

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.1. Size:252K  fairchild semi
 fdb060an08a0 fdp060an08a0.pdf

FDB0630N1507L FDB0630N1507L

November 2002FDB060AN08A0 / FDP060AN08A0N-Channel PowerTrench MOSFET75V, 80A, 6.0mFeatures Applications rDS(ON) = 4.8m (Typ.), VGS = 10V, ID = 80A 42V Automotive Load Control Qg(tot) = 73nC (Typ.), VGS = 10V Starter / Alternator Systems Low Miller Charge Electronic Power Steering Systems Low QRR Body Diode Electronic Valve Train Systems U

 9.2. Size:383K  onsemi
 fdb0690n1507l.pdf

FDB0630N1507L FDB0630N1507L

FDB0690N1507LN-Channel PowerTrench MOSFET150 V, 115 A, 6.9 mGeneral DescriptionFeaturesThis N-Channel MOSFET is produced using ON Max rDS(on) = 6.9 m at VGS = 10 V, ID = 17 A Semiconductors advance PowerTrench process that has been especially tailored to minimize the on-state resistance Fast Switching Speedwhile maintaining superior ruggedness and switchingperfor

 9.3. Size:1079K  onsemi
 fdp060an08a0 fdb060an08a0.pdf

FDB0630N1507L FDB0630N1507L

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.4. Size:277K  inchange semiconductor
 fdb060an08a0.pdf

FDB0630N1507L FDB0630N1507L

isc N-Channel MOSFET Transistor FDB060AN08A0FEATURESWith TO-263 packagingDrain Source Voltage-: V 75VDSSStatic drain-source on-resistance:RDS(on) 6m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25

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