All MOSFET. FDB0630N1507L Datasheet

 

FDB0630N1507L MOSFET. Datasheet pdf. Equivalent


   Type Designator: FDB0630N1507L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 130 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 97 nC
   trⓘ - Rise Time: 31 nS
   Cossⓘ - Output Capacitance: 552 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0064 Ohm
   Package: D2-PAK-7L

 FDB0630N1507L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDB0630N1507L Datasheet (PDF)

 ..1. Size:406K  onsemi
 fdb0630n1507l.pdf

FDB0630N1507L FDB0630N1507L

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.1. Size:252K  fairchild semi
 fdb060an08a0 fdp060an08a0.pdf

FDB0630N1507L FDB0630N1507L

November 2002FDB060AN08A0 / FDP060AN08A0N-Channel PowerTrench MOSFET75V, 80A, 6.0mFeatures Applications rDS(ON) = 4.8m (Typ.), VGS = 10V, ID = 80A 42V Automotive Load Control Qg(tot) = 73nC (Typ.), VGS = 10V Starter / Alternator Systems Low Miller Charge Electronic Power Steering Systems Low QRR Body Diode Electronic Valve Train Systems U

 9.2. Size:383K  onsemi
 fdb0690n1507l.pdf

FDB0630N1507L FDB0630N1507L

FDB0690N1507LN-Channel PowerTrench MOSFET150 V, 115 A, 6.9 mGeneral DescriptionFeaturesThis N-Channel MOSFET is produced using ON Max rDS(on) = 6.9 m at VGS = 10 V, ID = 17 A Semiconductors advance PowerTrench process that has been especially tailored to minimize the on-state resistance Fast Switching Speedwhile maintaining superior ruggedness and switchingperfor

 9.3. Size:1079K  onsemi
 fdp060an08a0 fdb060an08a0.pdf

FDB0630N1507L FDB0630N1507L

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.4. Size:277K  inchange semiconductor
 fdb060an08a0.pdf

FDB0630N1507L FDB0630N1507L

isc N-Channel MOSFET Transistor FDB060AN08A0FEATURESWith TO-263 packagingDrain Source Voltage-: V 75VDSSStatic drain-source on-resistance:RDS(on) 6m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: BUZ905P | 2SK2510

 

 
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