FDB9406-F085 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDB9406-F085
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 176 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 110 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 107 nC
   trⓘ - Tiempo de subida: 81 nS
   Cossⓘ - Capacitancia de salida: 2015 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0018 Ohm
   Paquete / Cubierta: TO263

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FDB9406-F085 Datasheet (PDF)

..1. Size:420K onsemi
fdb9406-f085.pdf

FDB9406-F085N-Channel PowerTrench MOSFET DD40 V, 110 A, 1.8 mFeaturesG Typ RDS(on) = 1.31m at VGS = 10V, ID = 80AGS Typ Qg(tot) = 107nC at VGS = 10V, ID = 80ATO-263 UIS Capability SFDB SERIES RoHS Compliant Qualified to AEC Q101Applications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Electronic Steering Integrated

7.1. Size:517K fairchild semi
fdb9406 f085.pdf

June 2014FDB9406_F085N-Channel PowerTrench MOSFET40 V, 110 A, 1.8 m DDFeatures Typ RDS(on) = 1.31m at VGS = 10V, ID = 80A Typ Qg(tot) = 107nC at VGS = 10V, ID = 80AG UIS Capability RoHS CompliantGS Qualified to AEC Q101TO-263SFDB SERIESApplications Automotive Engine ControlForcurrentpackagedrawing,pleaserefertotheFairchild Po

7.2. Size:504K onsemi
fdb9406l-f085.pdf

FDB9406L-F085N-Channel Logic Level PowerTrench MOSFET40 V, 110 A, 1.5 mFeatures Typical RDS(on) = 1.2 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 121 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant Qualified to AEC Q101Applications Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated Starter/A

7.3. Size:288K inchange semiconductor
fdb9406l.pdf

isc N-Channel MOSFET Transistor FDB9406LFEATURESDrain Current : I =110A@ T =25D CDrain Source Voltage: V =40V(Min)DSSStatic Drain-Source On-Resistance: R =1.8m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

7.4. Size:287K inchange semiconductor
fdb9406.pdf

isc N-Channel MOSFET Transistor FDB9406FEATURESDrain Current : I =110A@ T =25D CDrain Source Voltage: V =40V(Min)DSSStatic Drain-Source On-Resistance: R =1.8m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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