FDB9406-F085 MOSFET. Datasheet pdf. Equivalent
Type Designator: FDB9406-F085
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 176 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 110 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 107 nC
trⓘ - Rise Time: 81 nS
Cossⓘ - Output Capacitance: 2015 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0018 Ohm
Package: TO263
FDB9406-F085 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDB9406-F085 Datasheet (PDF)
fdb9406-f085.pdf
FDB9406-F085N-Channel PowerTrench MOSFET DD40 V, 110 A, 1.8 mFeaturesG Typ RDS(on) = 1.31m at VGS = 10V, ID = 80AGS Typ Qg(tot) = 107nC at VGS = 10V, ID = 80ATO-263 UIS Capability SFDB SERIES RoHS Compliant Qualified to AEC Q101Applications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Electronic Steering Integrated
fdb9406 f085.pdf
June 2014FDB9406_F085N-Channel PowerTrench MOSFET40 V, 110 A, 1.8 m DDFeatures Typ RDS(on) = 1.31m at VGS = 10V, ID = 80A Typ Qg(tot) = 107nC at VGS = 10V, ID = 80AG UIS Capability RoHS CompliantGS Qualified to AEC Q101TO-263SFDB SERIESApplications Automotive Engine ControlForcurrentpackagedrawing,pleaserefertotheFairchild Po
fdb9406l-f085.pdf
FDB9406L-F085N-Channel Logic Level PowerTrench MOSFET40 V, 110 A, 1.5 mFeatures Typical RDS(on) = 1.2 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 121 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant Qualified to AEC Q101Applications Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated Starter/A
fdb9406l.pdf
isc N-Channel MOSFET Transistor FDB9406LFEATURESDrain Current : I =110A@ T =25D CDrain Source Voltage: V =40V(Min)DSSStatic Drain-Source On-Resistance: R =1.8m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
fdb9406.pdf
isc N-Channel MOSFET Transistor FDB9406FEATURESDrain Current : I =110A@ T =25D CDrain Source Voltage: V =40V(Min)DSSStatic Drain-Source On-Resistance: R =1.8m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
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