Справочник MOSFET. FDB9406-F085

 

FDB9406-F085 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FDB9406-F085
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 176 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 110 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 107 nC
   trⓘ - Время нарастания: 81 ns
   Cossⓘ - Выходная емкость: 2015 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0018 Ohm
   Тип корпуса: TO263

 Аналог (замена) для FDB9406-F085

 

 

FDB9406-F085 Datasheet (PDF)

 ..1. Size:420K  onsemi
 fdb9406-f085.pdf

FDB9406-F085 FDB9406-F085

FDB9406-F085N-Channel PowerTrench MOSFET DD40 V, 110 A, 1.8 mFeaturesG Typ RDS(on) = 1.31m at VGS = 10V, ID = 80AGS Typ Qg(tot) = 107nC at VGS = 10V, ID = 80ATO-263 UIS Capability SFDB SERIES RoHS Compliant Qualified to AEC Q101Applications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Electronic Steering Integrated

 7.1. Size:517K  fairchild semi
 fdb9406 f085.pdf

FDB9406-F085 FDB9406-F085

June 2014FDB9406_F085N-Channel PowerTrench MOSFET40 V, 110 A, 1.8 m DDFeatures Typ RDS(on) = 1.31m at VGS = 10V, ID = 80A Typ Qg(tot) = 107nC at VGS = 10V, ID = 80AG UIS Capability RoHS CompliantGS Qualified to AEC Q101TO-263SFDB SERIESApplications Automotive Engine ControlForcurrentpackagedrawing,pleaserefertotheFairchild Po

 7.2. Size:504K  onsemi
 fdb9406l-f085.pdf

FDB9406-F085 FDB9406-F085

FDB9406L-F085N-Channel Logic Level PowerTrench MOSFET40 V, 110 A, 1.5 mFeatures Typical RDS(on) = 1.2 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 121 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant Qualified to AEC Q101Applications Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated Starter/A

 7.3. Size:288K  inchange semiconductor
 fdb9406l.pdf

FDB9406-F085 FDB9406-F085

isc N-Channel MOSFET Transistor FDB9406LFEATURESDrain Current : I =110A@ T =25D CDrain Source Voltage: V =40V(Min)DSSStatic Drain-Source On-Resistance: R =1.8m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

 7.4. Size:287K  inchange semiconductor
 fdb9406.pdf

FDB9406-F085 FDB9406-F085

isc N-Channel MOSFET Transistor FDB9406FEATURESDrain Current : I =110A@ T =25D CDrain Source Voltage: V =40V(Min)DSSStatic Drain-Source On-Resistance: R =1.8m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top