FDD8453LZ-F085 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDD8453LZ-F085
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 118 W
Voltaje máximo drenador - fuente |Vds|: 40 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 50 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 3 V
Carga de la puerta (Qg): 60 nC
Tiempo de subida (tr): 10 nS
Conductancia de drenaje-sustrato (Cd): 340 pF
Resistencia entre drenaje y fuente RDS(on): 0.0065 Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de MOSFET FDD8453LZ-F085
FDD8453LZ-F085 Datasheet (PDF)
fdd8453lz-f085.pdf
FDD8453LZ-F085N-Channel Power Trench MOSFET40V, 50A, 6.5mFeatures Typ rDS(on) = 5m at VGS = 10V, ID = 15AGeneral DescriptionThis N-Channel MOSFET is produced using ON Typ rDS(on) = 6m at VGS = 4.5V, ID = 13ASemiconductors advanced PowerTrench process that HBM ESD protection level > 7kv typicalhas been especially tailored to minimize the RoHS Complianton-s
fdd8453lz f085.pdf
Aug 2012FDD8453LZ_F085N-Channel Power Trench MOSFET40V, 50A, 6.5m Features Typ rDS(on) = 5m at VGS = 10V, ID = 15AGeneral Description Typ rDS(on) = 6m at VGS = 4.5V, ID = 13AThis N-Channel MOSFET is produced using Fairchild HBM ESD protection level > 7kv typicalSemiconductors advanced PowerTrench process that RoHS Complianthas been especially tailored to mi
fdd8453lz.pdf
September 2007FDD8453LZtmN-Channel PowerTrench MOSFET 40V, 50A, 6.7mFeatures General Description Max rDS(on) = 6.7m at VGS = 10V, ID = 15A This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that has Max rDS(on) = 8.7m at VGS = 4.5V, ID = 13Abeen especially tailored to minimize the on-state resistance and HBM ESD pro
fdd8453lz.pdf
isc N-Channel MOSFET Transistor FDD8453LZFEATURESDrain Current : I =50A@ T =25D CDrain Source Voltage: V =40V(Min)DSSStatic Drain-Source On-Resistance: R =6.7m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
