FDD8453LZ-F085 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDD8453LZ-F085

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 118 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 50 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 340 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0065 Ohm

Encapsulados: TO252

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FDD8453LZ-F085 datasheet

 ..1. Size:417K  onsemi
 fdd8453lz-f085.pdf pdf_icon

FDD8453LZ-F085

FDD8453LZ-F085 N-Channel Power Trench MOSFET 40V, 50A, 6.5m Features Typ rDS(on) = 5m at VGS = 10V, ID = 15A General Description This N-Channel MOSFET is produced using ON Typ rDS(on) = 6m at VGS = 4.5V, ID = 13A Semiconductor s advanced PowerTrench process that HBM ESD protection level > 7kv typical has been especially tailored to minimize the RoHS Compliant on-s

 5.1. Size:411K  fairchild semi
 fdd8453lz f085.pdf pdf_icon

FDD8453LZ-F085

Aug 2012 FDD8453LZ_F085 N-Channel Power Trench MOSFET 40V, 50A, 6.5m Features Typ rDS(on) = 5m at VGS = 10V, ID = 15A General Description Typ rDS(on) = 6m at VGS = 4.5V, ID = 13A This N-Channel MOSFET is produced using Fairchild HBM ESD protection level > 7kv typical Semiconductor s advanced PowerTrench process that RoHS Compliant has been especially tailored to mi

 5.2. Size:277K  fairchild semi
 fdd8453lz.pdf pdf_icon

FDD8453LZ-F085

September 2007 FDD8453LZ tm N-Channel PowerTrench MOSFET 40V, 50A, 6.7m Features General Description Max rDS(on) = 6.7m at VGS = 10V, ID = 15A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has Max rDS(on) = 8.7m at VGS = 4.5V, ID = 13A been especially tailored to minimize the on-state resistance and HBM ESD pro

 5.3. Size:288K  inchange semiconductor
 fdd8453lz.pdf pdf_icon

FDD8453LZ-F085

isc N-Channel MOSFET Transistor FDD8453LZ FEATURES Drain Current I =50A@ T =25 D C Drain Source Voltage V =40V(Min) DSS Static Drain-Source On-Resistance R =6.7m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

MOSTRAR MÁS

Otros transistores... FDD4141-F085, FDD4243-F085, FDD4685-F085, FDD5810-F085, FDD5N50FTM-WS, FDD6N50TM-F085, FDD8444L-F085, FDD8447L_F085, IRF540, FDD86250_F085, FDD86367, FDD86367-F085, FDD86369, FDD86369-F085, FDD86380-F085, FDD86567-F085, FDD86569-F085