All MOSFET. FDD8453LZ-F085 Datasheet

 

FDD8453LZ-F085 MOSFET. Datasheet pdf. Equivalent


   Type Designator: FDD8453LZ-F085
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 118 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 60 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 340 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: TO252

 FDD8453LZ-F085 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDD8453LZ-F085 Datasheet (PDF)

 ..1. Size:417K  onsemi
 fdd8453lz-f085.pdf

FDD8453LZ-F085 FDD8453LZ-F085

FDD8453LZ-F085N-Channel Power Trench MOSFET40V, 50A, 6.5mFeatures Typ rDS(on) = 5m at VGS = 10V, ID = 15AGeneral DescriptionThis N-Channel MOSFET is produced using ON Typ rDS(on) = 6m at VGS = 4.5V, ID = 13ASemiconductors advanced PowerTrench process that HBM ESD protection level > 7kv typicalhas been especially tailored to minimize the RoHS Complianton-s

 5.1. Size:411K  fairchild semi
 fdd8453lz f085.pdf

FDD8453LZ-F085 FDD8453LZ-F085

Aug 2012FDD8453LZ_F085N-Channel Power Trench MOSFET40V, 50A, 6.5m Features Typ rDS(on) = 5m at VGS = 10V, ID = 15AGeneral Description Typ rDS(on) = 6m at VGS = 4.5V, ID = 13AThis N-Channel MOSFET is produced using Fairchild HBM ESD protection level > 7kv typicalSemiconductors advanced PowerTrench process that RoHS Complianthas been especially tailored to mi

 5.2. Size:277K  fairchild semi
 fdd8453lz.pdf

FDD8453LZ-F085 FDD8453LZ-F085

September 2007FDD8453LZtmN-Channel PowerTrench MOSFET 40V, 50A, 6.7mFeatures General Description Max rDS(on) = 6.7m at VGS = 10V, ID = 15A This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that has Max rDS(on) = 8.7m at VGS = 4.5V, ID = 13Abeen especially tailored to minimize the on-state resistance and HBM ESD pro

 5.3. Size:288K  inchange semiconductor
 fdd8453lz.pdf

FDD8453LZ-F085 FDD8453LZ-F085

isc N-Channel MOSFET Transistor FDD8453LZFEATURESDrain Current : I =50A@ T =25D CDrain Source Voltage: V =40V(Min)DSSStatic Drain-Source On-Resistance: R =6.7m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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