FDD8453LZ-F085. Аналоги и основные параметры

Наименование производителя: FDD8453LZ-F085

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 118 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 40 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 50 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 10 ns

Cossⓘ - Выходная емкость: 340 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0065 Ohm

Тип корпуса: TO252

Аналог (замена) для FDD8453LZ-F085

- подборⓘ MOSFET транзистора по параметрам

 

FDD8453LZ-F085 даташит

 ..1. Size:417K  onsemi
 fdd8453lz-f085.pdf pdf_icon

FDD8453LZ-F085

FDD8453LZ-F085 N-Channel Power Trench MOSFET 40V, 50A, 6.5m Features Typ rDS(on) = 5m at VGS = 10V, ID = 15A General Description This N-Channel MOSFET is produced using ON Typ rDS(on) = 6m at VGS = 4.5V, ID = 13A Semiconductor s advanced PowerTrench process that HBM ESD protection level > 7kv typical has been especially tailored to minimize the RoHS Compliant on-s

 5.1. Size:411K  fairchild semi
 fdd8453lz f085.pdf pdf_icon

FDD8453LZ-F085

Aug 2012 FDD8453LZ_F085 N-Channel Power Trench MOSFET 40V, 50A, 6.5m Features Typ rDS(on) = 5m at VGS = 10V, ID = 15A General Description Typ rDS(on) = 6m at VGS = 4.5V, ID = 13A This N-Channel MOSFET is produced using Fairchild HBM ESD protection level > 7kv typical Semiconductor s advanced PowerTrench process that RoHS Compliant has been especially tailored to mi

 5.2. Size:277K  fairchild semi
 fdd8453lz.pdf pdf_icon

FDD8453LZ-F085

September 2007 FDD8453LZ tm N-Channel PowerTrench MOSFET 40V, 50A, 6.7m Features General Description Max rDS(on) = 6.7m at VGS = 10V, ID = 15A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has Max rDS(on) = 8.7m at VGS = 4.5V, ID = 13A been especially tailored to minimize the on-state resistance and HBM ESD pro

 5.3. Size:288K  inchange semiconductor
 fdd8453lz.pdf pdf_icon

FDD8453LZ-F085

isc N-Channel MOSFET Transistor FDD8453LZ FEATURES Drain Current I =50A@ T =25 D C Drain Source Voltage V =40V(Min) DSS Static Drain-Source On-Resistance R =6.7m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

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