FDD8453LZ-F085 - параметры транзистора MOSFET, его аналоги, datasheet

FDD8453LZ-F085 Datasheet (PDF)

..1. Size:417K onsemi
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FDD8453LZ-F085N-Channel Power Trench MOSFET40V, 50A, 6.5mFeatures Typ rDS(on) = 5m at VGS = 10V, ID = 15AGeneral DescriptionThis N-Channel MOSFET is produced using ON Typ rDS(on) = 6m at VGS = 4.5V, ID = 13ASemiconductors advanced PowerTrench process that HBM ESD protection level > 7kv typicalhas been especially tailored to minimize the RoHS Complianton-s

5.1. Size:411K fairchild semi
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Aug 2012FDD8453LZ_F085N-Channel Power Trench MOSFET40V, 50A, 6.5m Features Typ rDS(on) = 5m at VGS = 10V, ID = 15AGeneral Description Typ rDS(on) = 6m at VGS = 4.5V, ID = 13AThis N-Channel MOSFET is produced using Fairchild HBM ESD protection level > 7kv typicalSemiconductors advanced PowerTrench process that RoHS Complianthas been especially tailored to mi

5.2. Size:277K fairchild semi
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September 2007FDD8453LZtmN-Channel PowerTrench MOSFET 40V, 50A, 6.7mFeatures General Description Max rDS(on) = 6.7m at VGS = 10V, ID = 15A This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that has Max rDS(on) = 8.7m at VGS = 4.5V, ID = 13Abeen especially tailored to minimize the on-state resistance and HBM ESD pro

5.3. Size:288K inchange semiconductor
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isc N-Channel MOSFET Transistor FDD8453LZFEATURESDrain Current : I =50A@ T =25D CDrain Source Voltage: V =40V(Min)DSSStatic Drain-Source On-Resistance: R =6.7m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .