FDD86250_F085 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDD86250_F085
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 160 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 50 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 34 nS
Cossⓘ - Capacitancia de salida: 169 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.022 Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de FDD86250_F085 MOSFET
FDD86250_F085 Datasheet (PDF)
fdd86250 f085.pdf

www.onsemi.comFDD86250_F085 (Note1)N-Channel Sheilded Gate PowerTrench MOSFET150 V, 50 A, 22 m Features Typical RDS(on) = 19.4 m at VGS = 10V, ID = 20 A Typical Qg(tot) = 28 nC at VGS = 10V, ID = 40 A UIS CapabilityD RoHS Compliant Qualified to AEC Q101DGApplications Automotive Engine ControlSGD-PAK PowerTrain Management TO-252(TO-252) Solenoid
fdd86250.pdf

December 2010FDD86250N-Channel PowerTrench MOSFET 150 V, 50 A, 22 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 22 m at VGS = 10 V, ID = 8 ASemiconductors advanced Power Trench process that has Max rDS(on) = 31 m at VGS = 6 V, ID = 6.5 Abeen especially tailored to minimize the on-state resistance and yet maintain
fdd86250.pdf

Isc N-Channel MOSFET Transistor FDD86250FEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volta
fdd86252.pdf

May 2013FDD86252N-Channel Shielded Gate PowerTrench MOSFET 150 V, 27 A, 52 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET TechnologySemiconductors advanced PowerTrench process that Max rDS(on) = 52 m at VGS = 10 V, ID = 5 Aincorporates Shielded Gate technology. This process has been optimized for the on-state re
Otros transistores... FDD4243-F085 , FDD4685-F085 , FDD5810-F085 , FDD5N50FTM-WS , FDD6N50TM-F085 , FDD8444L-F085 , FDD8447L_F085 , FDD8453LZ-F085 , 50N06 , FDD86367 , FDD86367-F085 , FDD86369 , FDD86369-F085 , FDD86380-F085 , FDD86567-F085 , FDD86569-F085 , FDD86580-F085 .
History: SWYS069R10VS | IRCP254 | 2SK2940 | 2SK2611
History: SWYS069R10VS | IRCP254 | 2SK2940 | 2SK2611



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