FDD86250_F085 Specs and Replacement

Type Designator: FDD86250_F085

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 160 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 34 nS

Cossⓘ - Output Capacitance: 169 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm

Package: TO252

FDD86250_F085 substitution

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FDD86250_F085 datasheet

 ..1. Size:958K  onsemi
 fdd86250 f085.pdf pdf_icon

FDD86250_F085

www.onsemi.com FDD86250_F085 (Note1) N-Channel Sheilded Gate PowerTrench MOSFET 150 V, 50 A, 22 m Features Typical RDS(on) = 19.4 m at VGS = 10V, ID = 20 A Typical Qg(tot) = 28 nC at VGS = 10V, ID = 40 A UIS Capability D RoHS Compliant Qualified to AEC Q101 D G Applications Automotive Engine Control S G D-PAK PowerTrain Management TO-252 (TO-252) Solenoid... See More ⇒

 6.1. Size:374K  fairchild semi
 fdd86250.pdf pdf_icon

FDD86250_F085

December 2010 FDD86250 N-Channel PowerTrench MOSFET 150 V, 50 A, 22 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 22 m at VGS = 10 V, ID = 8 A Semiconductor s advanced Power Trench process that has Max rDS(on) = 31 m at VGS = 6 V, ID = 6.5 A been especially tailored to minimize the on-state resistance and yet maintain ... See More ⇒

 6.2. Size:262K  inchange semiconductor
 fdd86250.pdf pdf_icon

FDD86250_F085

Isc N-Channel MOSFET Transistor FDD86250 FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volta... See More ⇒

 7.1. Size:343K  fairchild semi
 fdd86252.pdf pdf_icon

FDD86250_F085

May 2013 FDD86252 N-Channel Shielded Gate PowerTrench MOSFET 150 V, 27 A, 52 m Features General Description This N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET Technology Semiconductor s advanced PowerTrench process that Max rDS(on) = 52 m at VGS = 10 V, ID = 5 A incorporates Shielded Gate technology. This process has been optimized for the on-state re... See More ⇒

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Detailed specifications: FDD4243-F085, FDD4685-F085, FDD5810-F085, FDD5N50FTM-WS, FDD6N50TM-F085, FDD8444L-F085, FDD8447L_F085, FDD8453LZ-F085, 50N06, FDD86367, FDD86367-F085, FDD86369, FDD86369-F085, FDD86380-F085, FDD86567-F085, FDD86569-F085, FDD86580-F085

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