All MOSFET. FDD86250_F085 Datasheet

 

FDD86250_F085 Datasheet and Replacement


   Type Designator: FDD86250_F085
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 160 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 34 nS
   Cossⓘ - Output Capacitance: 169 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: TO252
 

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FDD86250_F085 Datasheet (PDF)

 ..1. Size:958K  onsemi
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FDD86250_F085

www.onsemi.comFDD86250_F085 (Note1)N-Channel Sheilded Gate PowerTrench MOSFET150 V, 50 A, 22 m Features Typical RDS(on) = 19.4 m at VGS = 10V, ID = 20 A Typical Qg(tot) = 28 nC at VGS = 10V, ID = 40 A UIS CapabilityD RoHS Compliant Qualified to AEC Q101DGApplications Automotive Engine ControlSGD-PAK PowerTrain Management TO-252(TO-252) Solenoid

 6.1. Size:374K  fairchild semi
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FDD86250_F085

December 2010FDD86250N-Channel PowerTrench MOSFET 150 V, 50 A, 22 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 22 m at VGS = 10 V, ID = 8 ASemiconductors advanced Power Trench process that has Max rDS(on) = 31 m at VGS = 6 V, ID = 6.5 Abeen especially tailored to minimize the on-state resistance and yet maintain

 6.2. Size:262K  inchange semiconductor
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FDD86250_F085

Isc N-Channel MOSFET Transistor FDD86250FEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volta

 7.1. Size:343K  fairchild semi
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FDD86250_F085

May 2013FDD86252N-Channel Shielded Gate PowerTrench MOSFET 150 V, 27 A, 52 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET TechnologySemiconductors advanced PowerTrench process that Max rDS(on) = 52 m at VGS = 10 V, ID = 5 Aincorporates Shielded Gate technology. This process has been optimized for the on-state re

Datasheet: FDD4243-F085 , FDD4685-F085 , FDD5810-F085 , FDD5N50FTM-WS , FDD6N50TM-F085 , FDD8444L-F085 , FDD8447L_F085 , FDD8453LZ-F085 , 50N06 , FDD86367 , FDD86367-F085 , FDD86369 , FDD86369-F085 , FDD86380-F085 , FDD86567-F085 , FDD86569-F085 , FDD86580-F085 .

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