All MOSFET. FDD86250_F085 Datasheet

 

FDD86250_F085 MOSFET. Datasheet pdf. Equivalent


   Type Designator: FDD86250_F085
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 160 W
   Maximum Drain-Source Voltage |Vds|: 150 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Drain Current |Id|: 50 A
   Maximum Junction Temperature (Tj): 175 °C
   Rise Time (tr): 34 nS
   Drain-Source Capacitance (Cd): 169 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.022 Ohm
   Package: TO252

 FDD86250_F085 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDD86250_F085 Datasheet (PDF)

 ..1. Size:958K  onsemi
fdd86250 f085.pdf

FDD86250_F085
FDD86250_F085

www.onsemi.comFDD86250_F085 (Note1)N-Channel Sheilded Gate PowerTrench MOSFET150 V, 50 A, 22 m Features Typical RDS(on) = 19.4 m at VGS = 10V, ID = 20 A Typical Qg(tot) = 28 nC at VGS = 10V, ID = 40 A UIS CapabilityD RoHS Compliant Qualified to AEC Q101DGApplications Automotive Engine ControlSGD-PAK PowerTrain Management TO-252(TO-252) Solenoid

 6.1. Size:374K  fairchild semi
fdd86250.pdf

FDD86250_F085
FDD86250_F085

December 2010FDD86250N-Channel PowerTrench MOSFET 150 V, 50 A, 22 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 22 m at VGS = 10 V, ID = 8 ASemiconductors advanced Power Trench process that has Max rDS(on) = 31 m at VGS = 6 V, ID = 6.5 Abeen especially tailored to minimize the on-state resistance and yet maintain

 6.2. Size:262K  inchange semiconductor
fdd86250.pdf

FDD86250_F085
FDD86250_F085

Isc N-Channel MOSFET Transistor FDD86250FEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volta

 7.1. Size:343K  fairchild semi
fdd86252.pdf

FDD86250_F085
FDD86250_F085

May 2013FDD86252N-Channel Shielded Gate PowerTrench MOSFET 150 V, 27 A, 52 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET TechnologySemiconductors advanced PowerTrench process that Max rDS(on) = 52 m at VGS = 10 V, ID = 5 Aincorporates Shielded Gate technology. This process has been optimized for the on-state re

 7.2. Size:568K  onsemi
fdd86252.pdf

FDD86250_F085
FDD86250_F085

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP450 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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