FDD86250_F085. Аналоги и основные параметры

Наименование производителя: FDD86250_F085

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 160 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 150 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 50 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 34 ns

Cossⓘ - Выходная емкость: 169 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.022 Ohm

Тип корпуса: TO252

Аналог (замена) для FDD86250_F085

- подборⓘ MOSFET транзистора по параметрам

 

FDD86250_F085 даташит

 ..1. Size:958K  onsemi
 fdd86250 f085.pdf pdf_icon

FDD86250_F085

www.onsemi.com FDD86250_F085 (Note1) N-Channel Sheilded Gate PowerTrench MOSFET 150 V, 50 A, 22 m Features Typical RDS(on) = 19.4 m at VGS = 10V, ID = 20 A Typical Qg(tot) = 28 nC at VGS = 10V, ID = 40 A UIS Capability D RoHS Compliant Qualified to AEC Q101 D G Applications Automotive Engine Control S G D-PAK PowerTrain Management TO-252 (TO-252) Solenoid

 6.1. Size:374K  fairchild semi
 fdd86250.pdf pdf_icon

FDD86250_F085

December 2010 FDD86250 N-Channel PowerTrench MOSFET 150 V, 50 A, 22 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 22 m at VGS = 10 V, ID = 8 A Semiconductor s advanced Power Trench process that has Max rDS(on) = 31 m at VGS = 6 V, ID = 6.5 A been especially tailored to minimize the on-state resistance and yet maintain

 6.2. Size:262K  inchange semiconductor
 fdd86250.pdf pdf_icon

FDD86250_F085

Isc N-Channel MOSFET Transistor FDD86250 FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volta

 7.1. Size:343K  fairchild semi
 fdd86252.pdf pdf_icon

FDD86250_F085

May 2013 FDD86252 N-Channel Shielded Gate PowerTrench MOSFET 150 V, 27 A, 52 m Features General Description This N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET Technology Semiconductor s advanced PowerTrench process that Max rDS(on) = 52 m at VGS = 10 V, ID = 5 A incorporates Shielded Gate technology. This process has been optimized for the on-state re

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