FDD8896-F085 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDD8896-F085
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 80 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 94 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 106 nS
   Cossⓘ - Capacitancia de salida: 490 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0057 Ohm
   Paquete / Cubierta: TO252

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FDD8896-F085 Datasheet (PDF)

..1. Size:496K onsemi
fdd8896-f085.pdf

FDD8896-F085FeaturesN-Channel PowerTrench MOSFET30V, 94A, 5.7m rDS(ON) = 5.7m, VGS = 10V, ID = 35AGeneral Description rDS(ON) = 6.8m, VGS = 4.5V, ID = 35AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using High performance trench technology for extremely loweither synchronous or conventional switchi

7.1. Size:567K fairchild semi
fdd8896 fdu8896.pdf

April 2008FDD8896 / FDU8896tmN-Channel PowerTrench MOSFET30V, 94A, 5.7mGeneral Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 5.7m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 6.8m, VGS = 4.5V, ID = 35Aeither synchronous or conventional switching PWMcontrollers. It has been opt

7.2. Size:1029K fairchild semi
fdd8896 f085.pdf

January 2012FDD8896_F085N-Channel PowerTrench MOSFET30V, 94A, 5.7mGeneral DescriptionFeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 5.7m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters usingeither synchronous or conventional switching PWM rDS(ON) = 6.8m, VGS = 4.5V, ID = 35Acontrollers. It has been optimized fo

7.3. Size:925K cn vbsemi
fdd8896.pdf

FDD8896www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.002 at VGS = 10 V 10030 72 nC0.003 at VGS = 4.5 V 90APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D STop ViewSN-Channel MOSFETABSOL

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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