Справочник MOSFET. FDD8896-F085

 

FDD8896-F085 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FDD8896-F085
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 80 W
   Предельно допустимое напряжение сток-исток |Uds|: 30 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 2.5 V
   Максимально допустимый постоянный ток стока |Id|: 94 A
   Максимальная температура канала (Tj): 175 °C
   Общий заряд затвора (Qg): 2.3 nC
   Время нарастания (tr): 106 ns
   Выходная емкость (Cd): 490 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.0057 Ohm
   Тип корпуса: TO252

 Аналог (замена) для FDD8896-F085

 

 

FDD8896-F085 Datasheet (PDF)

 ..1. Size:496K  onsemi
fdd8896-f085.pdf

FDD8896-F085
FDD8896-F085

FDD8896-F085FeaturesN-Channel PowerTrench MOSFET30V, 94A, 5.7m rDS(ON) = 5.7m, VGS = 10V, ID = 35AGeneral Description rDS(ON) = 6.8m, VGS = 4.5V, ID = 35AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using High performance trench technology for extremely loweither synchronous or conventional switchi

 7.1. Size:567K  fairchild semi
fdd8896 fdu8896.pdf

FDD8896-F085
FDD8896-F085

April 2008FDD8896 / FDU8896tmN-Channel PowerTrench MOSFET30V, 94A, 5.7mGeneral Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 5.7m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 6.8m, VGS = 4.5V, ID = 35Aeither synchronous or conventional switching PWMcontrollers. It has been opt

 7.2. Size:1029K  fairchild semi
fdd8896 f085.pdf

FDD8896-F085
FDD8896-F085

January 2012FDD8896_F085N-Channel PowerTrench MOSFET30V, 94A, 5.7mGeneral DescriptionFeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 5.7m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters usingeither synchronous or conventional switching PWM rDS(ON) = 6.8m, VGS = 4.5V, ID = 35Acontrollers. It has been optimized fo

 7.3. Size:925K  cn vbsemi
fdd8896.pdf

FDD8896-F085
FDD8896-F085

FDD8896www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.002 at VGS = 10 V 10030 72 nC0.003 at VGS = 4.5 V 90APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D STop ViewSN-Channel MOSFETABSOL

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