All MOSFET. FDD8896-F085 Datasheet

 

FDD8896-F085 Datasheet and Replacement


   Type Designator: FDD8896-F085
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 80 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 94 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 2.3 nC
   tr ⓘ - Rise Time: 106 nS
   Cossⓘ - Output Capacitance: 490 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0057 Ohm
   Package: TO252
 

 FDD8896-F085 substitution

   - MOSFET ⓘ Cross-Reference Search

 

FDD8896-F085 Datasheet (PDF)

 ..1. Size:496K  onsemi
fdd8896-f085.pdf pdf_icon

FDD8896-F085

FDD8896-F085FeaturesN-Channel PowerTrench MOSFET30V, 94A, 5.7m rDS(ON) = 5.7m, VGS = 10V, ID = 35AGeneral Description rDS(ON) = 6.8m, VGS = 4.5V, ID = 35AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using High performance trench technology for extremely loweither synchronous or conventional switchi

 7.1. Size:567K  fairchild semi
fdd8896 fdu8896.pdf pdf_icon

FDD8896-F085

April 2008FDD8896 / FDU8896tmN-Channel PowerTrench MOSFET30V, 94A, 5.7mGeneral Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 5.7m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 6.8m, VGS = 4.5V, ID = 35Aeither synchronous or conventional switching PWMcontrollers. It has been opt

 7.2. Size:1029K  fairchild semi
fdd8896 f085.pdf pdf_icon

FDD8896-F085

January 2012FDD8896_F085N-Channel PowerTrench MOSFET30V, 94A, 5.7mGeneral DescriptionFeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 5.7m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters usingeither synchronous or conventional switching PWM rDS(ON) = 6.8m, VGS = 4.5V, ID = 35Acontrollers. It has been optimized fo

 7.3. Size:925K  cn vbsemi
fdd8896.pdf pdf_icon

FDD8896-F085

FDD8896www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.002 at VGS = 10 V 10030 72 nC0.003 at VGS = 4.5 V 90APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D STop ViewSN-Channel MOSFETABSOL

Datasheet: FDD86367-F085 , FDD86369 , FDD86369-F085 , FDD86380-F085 , FDD86567-F085 , FDD86569-F085 , FDD86580-F085 , FDD86581-F085 , IRFB4110 , FDD9407-F085 , FDD9407L-F085 , FDD9409L-F085 , FDD9410-F085 , FDD9410L-F085 , FDD9411-F085 , FDD9411L-F085 , FDD9507L-F085 .

Keywords - FDD8896-F085 MOSFET datasheet

 FDD8896-F085 cross reference
 FDD8896-F085 equivalent finder
 FDD8896-F085 lookup
 FDD8896-F085 substitution
 FDD8896-F085 replacement

 

 
Back to Top

 


 
.