FDMD8560L MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDMD8560L

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 48 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 93 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 15 nS

Cossⓘ - Capacitancia de salida: 1110 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0032 Ohm

Encapsulados: POWER5X6

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FDMD8560L datasheet

 ..1. Size:688K  onsemi
fdmd8560l.pdf pdf_icon

FDMD8560L

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.1. Size:676K  fairchild semi
fdmd85100.pdf pdf_icon

FDMD8560L

March 2015 FDMD85100 Dual N-Channel PowerTrench MOSFET Q1 100 V, 48A, 9.9 m Q2 100 V, 48A, 9.9 m Features General Description Q1 N-Channel This device includes two 100V N-Channel MOSFETs in a dual Power (5 mm X 6 mm) package. HS source and LS Drain Max rDS(on) = 9.9 m at VGS = 10 V, ID = 10.4 A internally connected for half/full bridge, low source inductance Max rDS(on

 8.2. Size:706K  onsemi
fdmd8530.pdf pdf_icon

FDMD8560L

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.3. Size:653K  onsemi
fdmd8540l.pdf pdf_icon

FDMD8560L

MOSFET Dual, N-Channel, POWERTRENCH) Q1 40 V, 156 A, 1.5 mW Q2 40 V, 156 A, 1.5 mW FDMD8540L www.onsemi.com General Description This device includes two 40 V N-Channel MOSFETs in a dual VDS rDS(ON) MAX ID MAX Power (5 mm x 6 mm) package. HS source and LS drain internally connected for half/full bridge, low source inductance package, low 40 V 1.5 mW @ 10 V 156 A rDS(on)/Qg FOM

Otros transistores... FDD9509L-F085, FDD9510L-F085, FDD9511L-F085, FDG6332C-F085, FDMC010N08C, FDMC8010DC, FDMD8530, FDMD8540L, IRF4905, 2N7002NXAK, 2N7002NXBK, BUK6D120-40E, BUK6D120-60P, BUK6D125-60E, BUK6D210-60E, BUK6D22-30E, BUK6D230-80E