FDMD8560L MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: FDMD8560L
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 48 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 93 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 15 ns
Cossⓘ - Выходная емкость: 1110 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0032 Ohm
Тип корпуса: POWER5X6
FDMD8560L Datasheet (PDF)
fdmd8560l.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdmd85100.pdf
March 2015FDMD85100Dual N-Channel PowerTrench MOSFETQ1: 100 V, 48A, 9.9 m Q2: 100 V, 48A, 9.9 mFeatures General DescriptionQ1: N-ChannelThis device includes two 100V N-Channel MOSFETs in a dual Power (5 mm X 6 mm) package. HS source and LS Drain Max rDS(on) = 9.9 m at VGS = 10 V, ID = 10.4 Ainternally connected for half/full bridge, low source inductance Max rDS(on
fdmd8530.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdmd8540l.pdf
MOSFET Dual, N-Channel,POWERTRENCH)Q1: 40 V, 156 A, 1.5 mWQ2: 40 V, 156 A, 1.5 mWFDMD8540Lwww.onsemi.comGeneral DescriptionThis device includes two 40 V N-Channel MOSFETs in a dualVDS rDS(ON) MAX ID MAXPower (5 mm x 6 mm) package. HS source and LS drain internallyconnected for half/full bridge, low source inductance package, low40 V 1.5 mW @ 10 V 156 ArDS(on)/Qg FOM
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918