FDMD8560L PDF and Equivalents Search

 

FDMD8560L Specs and Replacement

Type Designator: FDMD8560L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 48 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 93 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 1110 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0032 Ohm

Package: POWER5X6

FDMD8560L substitution

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FDMD8560L datasheet

 ..1. Size:688K  onsemi
fdmd8560l.pdf pdf_icon

FDMD8560L

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 8.1. Size:676K  fairchild semi
fdmd85100.pdf pdf_icon

FDMD8560L

March 2015 FDMD85100 Dual N-Channel PowerTrench MOSFET Q1 100 V, 48A, 9.9 m Q2 100 V, 48A, 9.9 m Features General Description Q1 N-Channel This device includes two 100V N-Channel MOSFETs in a dual Power (5 mm X 6 mm) package. HS source and LS Drain Max rDS(on) = 9.9 m at VGS = 10 V, ID = 10.4 A internally connected for half/full bridge, low source inductance Max rDS(on... See More ⇒

 8.2. Size:706K  onsemi
fdmd8530.pdf pdf_icon

FDMD8560L

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 8.3. Size:653K  onsemi
fdmd8540l.pdf pdf_icon

FDMD8560L

MOSFET Dual, N-Channel, POWERTRENCH) Q1 40 V, 156 A, 1.5 mW Q2 40 V, 156 A, 1.5 mW FDMD8540L www.onsemi.com General Description This device includes two 40 V N-Channel MOSFETs in a dual VDS rDS(ON) MAX ID MAX Power (5 mm x 6 mm) package. HS source and LS drain internally connected for half/full bridge, low source inductance package, low 40 V 1.5 mW @ 10 V 156 A rDS(on)/Qg FOM ... See More ⇒

Detailed specifications: FDD9509L-F085 , FDD9510L-F085 , FDD9511L-F085 , FDG6332C-F085 , FDMC010N08C , FDMC8010DC , FDMD8530 , FDMD8540L , IRF4905 , 2N7002NXAK , 2N7002NXBK , BUK6D120-40E , BUK6D120-60P , BUK6D125-60E , BUK6D210-60E , BUK6D22-30E , BUK6D230-80E .

Keywords - FDMD8560L MOSFET specs

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