STP4N100XI MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: STP4N100XI
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 1000 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 80 nC
   trⓘ - Tiempo de subida: 130 nS
   Cossⓘ - Capacitancia de salida: 165 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 8 Ohm
   Paquete / Cubierta: ISOWATT221

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STP4N100XI Datasheet (PDF)

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INCHANGE Semiconductorisc N-Channel MOSFET Transistor STP4NK60ZFPFEATURESWith TO-220F packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYM

Otros transistores... STP3NA80 , STP3NA80FI , STP40N05 , STP40N05FI , STP40N10 , STP40N10FI , STP4N100 , STP4N100FI , 5N50 , STP4N40 , STP4N40FI , STP4N80XI , STP4N90 , STP4N90FI , STP4NA60 , STP4NA60FI , STP4NA80 .