STP4N100XI Datasheet. Specs and Replacement

Type Designator: STP4N100XI  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 130 nS

Cossⓘ - Output Capacitance: 165 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm

Package: ISOWATT221

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STP4N100XI substitution

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STP4N100XI datasheet

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STP4N100XI

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STP4N100XI

STP4N100 STP4N100FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP4N100 1000 V ... See More ⇒

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STP4N100XI

STFW4N150 STP4N150, STW4N150 N-channel 1500 V, 5 , 4 A, PowerMESH Power MOSFET in TO-220, TO-247, TO-3PF Features Type VDSS RDS(on) max ID Pw STFW4N150 1500 V ... See More ⇒

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STP4N100XI

STP4NK50Z - STP4NK50ZFP STD4NK50Z - STD4NK50Z-1 N-CHANNEL 500V - 2.4 - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH Power MOSFET TYPE VDSS RDS(on) ID Pw STP4NK50Z 500 V ... See More ⇒

Detailed specifications: STP3NA80, STP3NA80FI, STP40N05, STP40N05FI, STP40N10, STP40N10FI, STP4N100, STP4N100FI, IRFP064N, STP4N40, STP4N40FI, STP4N80XI, STP4N90, STP4N90FI, STP4NA60, STP4NA60FI, STP4NA80

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs