STP4N100XI Datasheet and Replacement

   Type Designator: STP4N100XI
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 130 nS
   Cossⓘ - Output Capacitance: 165 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm
   Package: ISOWATT221

STP4N100XI substitution

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STP4N100XI Datasheet (PDF)

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stp4n100xi.pdf pdf_icon

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STP4N100STP4N100FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP4N100 1000 V

8.1. Size:756K st
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9.1. Size:664K st
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STP4NK50Z - STP4NK50ZFPSTD4NK50Z - STD4NK50Z-1N-CHANNEL 500V - 2.4 - 3A TO-220/TO-220FP/DPAK/IPAKZener-Protected SuperMESHPower MOSFETTYPE VDSS RDS(on) ID PwSTP4NK50Z 500 V

9.2. Size:338K st
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STF4N62K3, STFI4N62K3, STI4N62K3, STP4N62K3, STU4N62K3N-channel 620 V, 1.7 typ., 3.8 A SuperMESH3 Power MOSFET in TO-220FP, IPAKFP, IPAK, TO-220 and IPAK packagesDatasheet production dataFeaturesTABOrder codes VDSS RDS(on) max ID PTOT3STF4N62K3 25 W 32211STFI4N62K3 25 WTO-220FPIPAKSTI4N62K3 620 V

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STP4NB80STP4NB80FPN - CHANNEL 800V - 3 - 4A - TO-220/TO-220FPPowerMESH MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTP4NB80 800 V 3.3 4 ASTP4NB80FP 800 V 3.3 4 A TYPICAL R = 3 DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED3 32 2DESCRIPTION 1 1Using the latest high voltage

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STP4NM60STD3NM60 - STD3NM60-1N-CHANNEL 600V - 1.3 - 3A TO-220/DPAK/IPAKZener-Protected MDmeshPower MOSFETTYPE VDSS RDS(on) ID PwSTP4NM60 600 V

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9.13. Size:53K st
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STP4NA80STP4NA80FIN - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP4NA80 800 V

9.16. Size:932K st
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STD4N52K3, STF4N52K3STP4N52K3, STU4N52K3N-channel 525 V, 2.5 A, 2.1 , IPAK, DPAK, TO-220FP, TO-220SuperMESH3 Power MOSFETFeaturesRDS(on) Order codes VDSS ID Pwmax 33211STD4N52K3 2.5 A 45 WDPAKIPAKSTF4N52K3 2.5 A 20 W525 V

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STP4NK60Z-STP4NK60ZFP-STB4NK60Z-1STB4NK60Z-STD4NK60Z-STD4NK60Z-1N-CHANNEL600V-1.76-4ATO-220/FP/DPAK/IPAK/D2PAK/I2PAKZener-Protected SuperMESHPower MOSFETTYPE VDSS RDS(on) ID PwSTP4NK60Z 600 V

9.18. Size:725K st
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STP4N90K5 N-channel 900 V, 1.90 typ.,3 A MDmesh K5 Power MOSFET in a TO-220 package Datasheet - production data Features Order code V R max. I DS DS(on) DTABSTP4N90K5 900 V 2.10 3 A Industrys lowest R x area DS(on) Industrys best FoM (figure of merit) 32 Ultra-low gate charge 1 100% avalanche tested TO-220 Zener-protected Appl

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9.22. Size:666K st
stp4nk50z stp4nk50zfp std4nk50z std4nk50z-1.pdf pdf_icon

STP4NK50Z - STP4NK50ZFPSTD4NK50Z - STD4NK50Z-1N-CHANNEL 500V - 2.4 - 3A TO-220/TO-220FP/DPAK/IPAKZener-Protected SuperMESHPower MOSFETTYPE VDSS RDS(on) ID PwSTP4NK50Z 500 V

9.23. Size:246K st
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STP4NB80STP4NB80FPN - CHANNEL 800V - 3 - 4A - TO-220/TO-220FPPowerMESH MOSFETTYPE VDSS RDS(on) IDSTP4NB80 800 V 3.3 4 ASTP4NB80FP 800 V 3.3 4 A TYPICAL R = 3 DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED3 32 2DESCRIPTION 1 1Using the latest high voltage MESH OVERLAYp

9.24. Size:553K st
stp4nc80z stp4nc80zfp stb4nc80z stb4nc80z-1.pdf pdf_icon

STP4NC80Z - STP4NC80ZFPSTB4NC80Z - STB4NC80Z-1N-CHANNEL 800V - 2.4 - 4A TO-220/FP/D2PAK/I2PAKZener-Protected PowerMESHIII MOSFETTYPE VDSS RDS(on) IDSTP4NC80Z/FP 800V

9.25. Size:176K st
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STP4NK80Z - STP4NK80ZFPSTD4NK80Z - STD4NK80Z-1N-channel 800V - 3 - 3A - TO-220/TO-220FP/DPAK/IPAKZener - Protected SuperMESH MOSFETGeneral featuresVDSS Type RDS(on) ID(@Tjmax)32STP4NK80Z 800 V

9.28. Size:1294K st
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9.29. Size:903K st
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STP4NC60 - STP4NC60FPSTB4NC60-1N-CHANNEL 600V - 1.8 - 4.2A TO-220/TO-220FP/I2PAKPowerMeshII MOSFETTYPE VDSS RDS(on) IDSTP4NC60 600V

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STP4NA100N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORPRELIMINARY DATATYPE VDSS RDS(on) IDSTP4NA100 1000 V

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STP4NK80Z - STP4NK80ZFPSTD4NK80Z - STD4NK80Z-1N-CHANNEL 800V - 3 - 3A TO-220/TO-220FP/DPAK/IPAKZener-Protected SuperMESH Power MOSFETTYPE VDSS RDS(on) ID PwSTP4NK80Z 800 V

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STP4NA60STP4NA60FIN - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP4NA60 600 V

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STP4NK60Z, STP4NK60ZFPN-channel 600 V, 1.7 typ., 4 A Zener-protected SuperMESH Power MOSFETs in TO-220 and TO-220FP packagesDatasheet - production dataFeatures Order codes VDS RDS(on) max. PTOT IDSTP4NK60ZTAB600 V 2 70 W 4 ASTP4NK60ZFP 100% avalanche tested3 32 211 Very low intrinsic capacitancesTO-220TO-220FP Zener-protectedApplications

9.42. Size:201K inchange semiconductor
stp4nk60zfp.pdf pdf_icon

INCHANGE Semiconductorisc N-Channel MOSFET Transistor STP4NK60ZFPFEATURESWith TO-220F packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYM

Datasheet: STP3NA80 , STP3NA80FI , STP40N05 , STP40N05FI , STP40N10 , STP40N10FI , STP4N100 , STP4N100FI , 8205A , STP4N40 , STP4N40FI , STP4N80XI , STP4N90 , STP4N90FI , STP4NA60 , STP4NA60FI , STP4NA80 .