STP4N80XI MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

STP4N80XI MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STP4N80XI

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 30 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 150 nS

Cossⓘ - Capacitancia de salida: 150 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 7 Ohm

Encapsulados: ISOWATT221

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STP4N80XI datasheet

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stp4n80xi.pdf pdf_icon

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STD4N80K5, STF4N80K5, STP4N80K5, STU4N80K5 N-channel 800 V, 2.1 typ., 3 A MDmesh K5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages Datasheet - production data Features TAB Order code VDS RDS(on) max. ID PTOT 3 1 STD4N80K5 60 W 3 DPAK 2 STF4N80K5 20 W 1 800 V 2.5 3 A TO-220FP TAB STP4N80K5 60 W TAB STU4N80K5 Industry s lowest RDS(on) x area 3

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STP4NK50Z - STP4NK50ZFP STD4NK50Z - STD4NK50Z-1 N-CHANNEL 500V - 2.4 - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH Power MOSFET TYPE VDSS RDS(on) ID Pw STP4NK50Z 500 V

9.2. Size:338K st
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STP4NC60A - STP4NC60AFP STB4NC60A-1 N-CHANNEL 600V - 1.8 - 4.2A TO-220/TO-220FP/I2PAK PowerMesh II MOSFET TYPE VDSS RDS(on) ID STP4NC60A 600V

9.3. Size:1055K st
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STF4N62K3, STFI4N62K3, STI4N62K3, STP4N62K3, STU4N62K3 N-channel 620 V, 1.7 typ., 3.8 A SuperMESH3 Power MOSFET in TO-220FP, I PAKFP, I PAK, TO-220 and IPAK packages Datasheet production data Features TAB Order codes VDSS RDS(on) max ID PTOT 3 STF4N62K3 25 W 3 2 2 1 1 STFI4N62K3 25 W TO-220FP I PAK STI4N62K3 620 V

9.4. Size:82K st
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STP4NB80 STP4NB80FP N - CHANNEL 800V - 3 - 4A - TO-220/TO-220FP PowerMESH MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STP4NB80 800 V 3.3 4 A STP4NB80FP 800 V 3.3 4 A TYPICAL R = 3 DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 3 2 2 DESCRIPTION 1 1 Using the latest high voltage

9.5. Size:258K st
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STP4N20 N - CHANNEL 200V - 1.3 - 4A TO-220 POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP4N20 200 V

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STP4NM60 STD3NM60 - STD3NM60-1 N-CHANNEL 600V - 1.3 - 3A TO-220/DPAK/IPAK Zener-Protected MDmesh Power MOSFET TYPE VDSS RDS(on) ID Pw STP4NM60 600 V

9.7. Size:383K st
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STP4NA80 STP4NA80FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP4NA80 800 V

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STB4NK60Z, STB4NK60Z-1, STD4NK60Z STD4NK60Z-1, STP4NK60Z,STP4NK60ZFP N-channel 600 V - 1.76 - 4 A SuperMESH Power MOSFET DPAK - D2PAK - IPAK - I2PAK - TO-220 - TO-220FP Features RDS(on) Type VDSS PW ID 3 3 2 max 3 1 1 2 1 STB4NK60Z 600 V

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STFW4N150 STP4N150, STW4N150 N-channel 1500 V, 5 , 4 A, PowerMESH Power MOSFET in TO-220, TO-247, TO-3PF Features Type VDSS RDS(on) max ID Pw STFW4N150 1500 V

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STD4N52K3, STP4N52K3, STU4N52K3 Datasheet N-channel 525 V, 2.1 typ., 2.5 A MDmesh K3 Power MOSFETs in DPAK, TO-220 and IPAK packages Features TAB TAB 3 VDS RDS(on)max. ID Order code Package 1 DPAK STD4N52K3 2.5 A DPAK 3 2 TO-220 TAB 1 STP4N52K3 525 V 2.6 2.5 A TO-220 STU4N52K3 2.5 A IPAK 3 2 IPAK 1 100% avalanche tested Extremely high dv/dt capability D(

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STP4NA60FP N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V R I DSS DS(on) D STP4NA60FP 600 V

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STF4N62K3, STI4N62K3 STP4N62K3, STU4N62K3 N-channel 620 V, 1.7 , 3.8 A SuperMESH3 Power MOSFET TO-220FP, IPAK, TO-220, I PAK Features Order codes VDSS RDS(on) max ID Pw 3 2 STF4N62K3 25 W 1 3 2 STI4N62K3 70 W 1 620 V

9.14. Size:53K st
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STP4NB100 STP4NB100FP N - CHANNEL 1000V - 4 - 3.8A - TO-220/TO-220FP PowerMESH MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STP4NB100 1000 V

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STP4NA80 STP4NA80FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP4NA80 800 V

9.17. Size:932K st
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STD4N52K3, STF4N52K3 STP4N52K3, STU4N52K3 N-channel 525 V, 2.5 A, 2.1 , IPAK, DPAK, TO-220FP, TO-220 SuperMESH3 Power MOSFET Features RDS(on) Order codes VDSS ID Pw max 3 3 2 1 1 STD4N52K3 2.5 A 45 W DPAK IPAK STF4N52K3 2.5 A 20 W 525 V

9.18. Size:759K st
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STP4NK60Z-STP4NK60ZFP-STB4NK60Z-1 STB4NK60Z-STD4NK60Z-STD4NK60Z-1 N-CHANNEL600V-1.76 -4ATO-220/FP/DPAK/IPAK/D2PAK/I2PAK Zener-Protected SuperMESH Power MOSFET TYPE VDSS RDS(on) ID Pw STP4NK60Z 600 V

9.19. Size:725K st
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STP4NC50 STP4NC50FP N-CHANNEL 500V - 2.2 - 3.5A TO-220/TO-220FP PowerMesh II MOSFET TYPE VDSS RDS(on) ID STP4NC50 500 V

9.22. Size:366K st
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STP4N100 STP4N100FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP4N100 1000 V

9.23. Size:526K st
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STP4NC80Z - STP4NC80ZFP STB4NC80Z - STB4NC80Z-1 N-CHANNEL 800V - 2.4 - 4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH III MOSFET TYPE VDSS RDS(on) ID STP4NC80Z/FP 800V

9.24. Size:666K st
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STP4NK50Z - STP4NK50ZFP STD4NK50Z - STD4NK50Z-1 N-CHANNEL 500V - 2.4 - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH Power MOSFET TYPE VDSS RDS(on) ID Pw STP4NK50Z 500 V

9.25. Size:246K st
stp4nb80.pdf pdf_icon

STP4NB80 STP4NB80FP N - CHANNEL 800V - 3 - 4A - TO-220/TO-220FP PowerMESH MOSFET TYPE VDSS RDS(on) ID STP4NB80 800 V 3.3 4 A STP4NB80FP 800 V 3.3 4 A TYPICAL R = 3 DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 3 2 2 DESCRIPTION 1 1 Using the latest high voltage MESH OVERLAY p

9.26. Size:553K st
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STP4NC80Z - STP4NC80ZFP STB4NC80Z - STB4NC80Z-1 N-CHANNEL 800V - 2.4 - 4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH III MOSFET TYPE VDSS RDS(on) ID STP4NC80Z/FP 800V

9.27. Size:176K st
stp4nb50 stp4nb50fp.pdf pdf_icon

STP4NB50 STP4NB50FP N-CHANNEL 500V - 2.5 - 3.8A - TO-220/TO-220FP PowerMesh MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STP4NB50 500 V

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9.30. Size:291K st
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9.32. Size:801K st
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STB4N62K3, STF4N62K3 STI4N62K3, STP4N62K3 N-channel 620 V, 1.8 , 3.8 A SuperMESH3 Power MOSFET D2PAK, TO-220FP, I2PAK, TO-220 Preliminary data Features RDS(on) Type VDSS ID Pw max 3 3 3 1 1 STB4N62K3 70 W 2 1 D PAK STF4N62K3 25 W TO-220FP 620 V

9.33. Size:331K st
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STP4NB30 STP4NB30FP N-CHANNEL 300V - 1.8 - 4A - TO-220/TO-220FP PowerMesh MOSFET TYPE VDSS RDS(on) ID STP4NB30 300 V

9.34. Size:210K st
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STP4NB100 STP4NB100FP N - CHANNEL 1000V - 4 - 3.8A - TO-220/TO-220FP PowerMESH MOSFET TYPE V R I DSS DS(on) D STP4NB100 1000 V

9.35. Size:129K st
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STP4NB50 STP4NB50FP N-CHANNEL 500V - 2.5 - 3.8A - TO-220/TO-220FP PowerMesh MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STP4NB50 500 V

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STP4NA40 STP4NA40FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP4NA40 400 V

9.37. Size:356K st
stp4nc60-fp--1.pdf pdf_icon

STP4NC60 - STP4NC60FP STB4NC60-1 N-CHANNEL 600V - 1.8 - 4.2A TO-220/TO-220FP/I2PAK PowerMesh II MOSFET TYPE VDSS RDS(on) ID STP4NC60 600V

9.38. Size:77K st
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STP4NA100 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE VDSS RDS(on) ID STP4NA100 1000 V

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STP4NA60 STP4NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP4NA60 600 V

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STP4NK60Z, STP4NK60ZFP N-channel 600 V, 1.7 typ., 4 A Zener-protected SuperMESH Power MOSFETs in TO-220 and TO-220FP packages Datasheet - production data Features Order codes VDS RDS(on) max. PTOT ID STP4NK60Z TAB 600 V 2 70 W 4 A STP4NK60ZFP 100% avalanche tested 3 3 2 2 1 1 Very low intrinsic capacitances TO-220 TO-220FP Zener-protected Applications

9.43. Size:201K inchange semiconductor
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INCHANGE Semiconductor isc N-Channel MOSFET Transistor STP4NK60ZFP FEATURES With TO-220F packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM

Otros transistores... STP40N05FI , STP40N10 , STP40N10FI , STP4N100 , STP4N100FI , STP4N100XI , STP4N40 , STP4N40FI , IRFZ44N , STP4N90 , STP4N90FI , STP4NA60 , STP4NA60FI , STP4NA80 , STP4NA80FI , STP50N05L , STP50N05LFI .