STP4N80XI Datasheet. Specs and Replacement
Type Designator: STP4N80XI 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 150 nS
Cossⓘ - Output Capacitance: 150 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 7 Ohm
Package: ISOWATT221
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STP4N80XI datasheet
7.1. Size:1294K st
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9.43. Size:201K inchange semiconductor
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INCHANGE Semiconductor isc N-Channel MOSFET Transistor STP4NK60ZFP FEATURES With TO-220F packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM... See More ⇒
Detailed specifications: STP40N05FI, STP40N10, STP40N10FI, STP4N100, STP4N100FI, STP4N100XI, STP4N40, STP4N40FI, IRFZ44N, STP4N90, STP4N90FI, STP4NA60, STP4NA60FI, STP4NA80, STP4NA80FI, STP50N05L, STP50N05LFI
Keywords - STP4N80XI MOSFET specs
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