NX138AK MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NX138AK

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.265 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 0.19 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 2.3 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 4.5 Ohm

Encapsulados: SOT23

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NX138AK datasheet

 ..1. Size:781K  nxp
 nx138ak.pdf pdf_icon

NX138AK

NX138AK 60 V, N-channel Tench MOSFET 10 June 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Discharge (

 0.1. Size:783K  nxp
 nx138aks.pdf pdf_icon

NX138AK

NX138AKS 60 V, dual N-channel Trench MOSFET 15 June 2016 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroSt

 9.1. Size:728K  nxp
 nx138bk.pdf pdf_icon

NX138AK

NX138BK 60 V, single N-channel Trench MOSFET 29 January 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic

 9.2. Size:747K  nxp
 nx138bkw.pdf pdf_icon

NX138AK

NX138BKW 60 V, N-channel Trench MOSFET 15 June 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Disch

MOSTRAR MÁS

Otros transistores... BUK9M9R1-40E, BUK9M9R5-40H, BUK9Y1R3-40H, BUK9Y1R6-40H, BUK9Y1R9-40H, BUK9Y2R4-40H, BUK9Y2R8-40H, GAN063-650WSA, 13N50, NX138AKS, NX138BK, NX138BKS, NX138BKW, NX3008NBKMB, NX3008PBKMB, NX3020NAKS, NX3020NAKV