NX138AK
MOSFET. Datasheet pdf. Equivalent
Type Designator: NX138AK
Marking Code: AP*
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.265
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5
V
|Id|ⓘ - Maximum Drain Current: 0.19
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 0.9
nC
trⓘ - Rise Time: 10
nS
Cossⓘ -
Output Capacitance: 2.3
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.5
Ohm
Package:
SOT23
NX138AK
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NX138AK
Datasheet (PDF)
..1. Size:781K nxp
nx138ak.pdf
NX138AK60 V, N-channel Tench MOSFET10 June 2016 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Discharge (
0.1. Size:783K nxp
nx138aks.pdf
NX138AKS60 V, dual N-channel Trench MOSFET15 June 2016 Product data sheet1. General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363(SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroSt
9.1. Size:728K nxp
nx138bk.pdf
NX138BK60 V, single N-channel Trench MOSFET29 January 2016 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic
9.2. Size:747K nxp
nx138bkw.pdf
NX138BKW60 V, N-channel Trench MOSFET15 June 2016 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323(SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Disch
9.3. Size:754K nxp
nx138bks.pdf
NX138BKS60 V, dual N-channel Trench MOSFET15 June 2016 Product data sheet1. General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroSta
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