NX138BKW Todos los transistores

 

NX138BKW MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NX138BKW
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.266 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.21 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 3.1 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3.5 Ohm
   Paquete / Cubierta: SOT323
 
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NX138BKW Datasheet (PDF)

 ..1. Size:747K  nxp
 nx138bkw.pdf pdf_icon

NX138BKW

NX138BKW60 V, N-channel Trench MOSFET15 June 2016 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323(SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Disch

 7.1. Size:728K  nxp
 nx138bk.pdf pdf_icon

NX138BKW

NX138BK60 V, single N-channel Trench MOSFET29 January 2016 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic

 7.2. Size:754K  nxp
 nx138bks.pdf pdf_icon

NX138BKW

NX138BKS60 V, dual N-channel Trench MOSFET15 June 2016 Product data sheet1. General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroSta

 9.1. Size:783K  nxp
 nx138aks.pdf pdf_icon

NX138BKW

NX138AKS60 V, dual N-channel Trench MOSFET15 June 2016 Product data sheet1. General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363(SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroSt

MOSTRAR MÁS

Otros transistores... BUK9Y1R9-40H , BUK9Y2R4-40H , BUK9Y2R8-40H , GAN063-650WSA , NX138AK , NX138AKS , NX138BK , NX138BKS , IRF530 , NX3008NBKMB , NX3008PBKMB , NX3020NAKS , NX3020NAKV , NX3020NAKW , NX6020CAKS , NX7002AKA , NX7002BKH .

History: IPA60R199CP | STM201N

 

 
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