NX138BKW Specs and Replacement

Type Designator: NX138BKW

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.266 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.21 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 3.1 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.5 Ohm

Package: SOT323

NX138BKW substitution

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NX138BKW datasheet

 ..1. Size:747K  nxp
 nx138bkw.pdf pdf_icon

NX138BKW

NX138BKW 60 V, N-channel Trench MOSFET 15 June 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Disch... See More ⇒

 7.1. Size:728K  nxp
 nx138bk.pdf pdf_icon

NX138BKW

NX138BK 60 V, single N-channel Trench MOSFET 29 January 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic... See More ⇒

 7.2. Size:754K  nxp
 nx138bks.pdf pdf_icon

NX138BKW

NX138BKS 60 V, dual N-channel Trench MOSFET 15 June 2016 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroSta... See More ⇒

 9.1. Size:783K  nxp
 nx138aks.pdf pdf_icon

NX138BKW

NX138AKS 60 V, dual N-channel Trench MOSFET 15 June 2016 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroSt... See More ⇒

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Detailed specifications: BUK9Y1R9-40H, BUK9Y2R4-40H, BUK9Y2R8-40H, GAN063-650WSA, NX138AK, NX138AKS, NX138BK, NX138BKS, IRF1010E, NX3008NBKMB, NX3008PBKMB, NX3020NAKS, NX3020NAKV, NX3020NAKW, NX6020CAKS, NX7002AKA, NX7002BKH

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.