All MOSFET. NX138BKW Datasheet

 

NX138BKW MOSFET. Datasheet pdf. Equivalent


   Type Designator: NX138BKW
   Marking Code: B8*
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.266 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id|ⓘ - Maximum Drain Current: 0.21 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 0.5 nC
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 3.1 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.5 Ohm
   Package: SOT323

 NX138BKW Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NX138BKW Datasheet (PDF)

 ..1. Size:747K  nxp
 nx138bkw.pdf

NX138BKW NX138BKW

NX138BKW60 V, N-channel Trench MOSFET15 June 2016 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323(SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Disch

 7.1. Size:728K  nxp
 nx138bk.pdf

NX138BKW NX138BKW

NX138BK60 V, single N-channel Trench MOSFET29 January 2016 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic

 7.2. Size:754K  nxp
 nx138bks.pdf

NX138BKW NX138BKW

NX138BKS60 V, dual N-channel Trench MOSFET15 June 2016 Product data sheet1. General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroSta

 9.1. Size:783K  nxp
 nx138aks.pdf

NX138BKW NX138BKW

NX138AKS60 V, dual N-channel Trench MOSFET15 June 2016 Product data sheet1. General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363(SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroSt

 9.2. Size:781K  nxp
 nx138ak.pdf

NX138BKW NX138BKW

NX138AK60 V, N-channel Tench MOSFET10 June 2016 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Discharge (

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History: IRF7240

 

 
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