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NX3008NBKMB MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NX3008NBKMB
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.36 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 0.53 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 6.5 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.4 Ohm
   Paquete / Cubierta: SOT883B
 

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NX3008NBKMB Datasheet (PDF)

 ..1. Size:1649K  nxp
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NX3008NBKMB

NX3008NBKMB30 V, single N-channel Trench MOSFETRev. 1 11 May 2012 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching ESD protection up

 5.1. Size:1602K  nxp
 nx3008nbk.pdf pdf_icon

NX3008NBKMB

NX3008NBK30 V, 400 mA N-channel Trench MOSFETRev. 1 2 August 2011 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching ESD protection up to 2 kV Low t

 5.2. Size:1598K  nxp
 nx3008nbkw.pdf pdf_icon

NX3008NBKMB

NX3008NBKW30 V, 350 mA N-channel Trench MOSFETRev. 1 2 August 2011 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching ESD protection up to 2 kV Low thre

 5.3. Size:1606K  nxp
 nx3008nbkv.pdf pdf_icon

NX3008NBKMB

NX3008NBKV30 V, 400 mA dual N-channel Trench MOSFETRev. 1 1 August 2011 Product data sheet1. Product profile1.1 General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching ESD protection

MOSTRAR MÁS

Otros transistores... BUK9Y2R4-40H , BUK9Y2R8-40H , GAN063-650WSA , NX138AK , NX138AKS , NX138BK , NX138BKS , NX138BKW , IRFB3607 , NX3008PBKMB , NX3020NAKS , NX3020NAKV , NX3020NAKW , NX6020CAKS , NX7002AKA , NX7002BKH , PMCM4401UNE .

 

 
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