NX3008NBKMB MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NX3008NBKMB

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.36 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 0.53 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

|VGSth|ⓘ - Tensión umbral entre puerta y fuente: 1.1 V

Qgⓘ - Carga de la puerta: 0.52 nC

trⓘ - Tiempo de subida: 11 nS

Cossⓘ - Capacitancia de salida: 6.5 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.4 Ohm

Encapsulados: SOT883B

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NX3008NBKMB datasheet

 ..1. Size:1649K  nxp
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NX3008NBKMB

NX3008NBKMB 30 V, single N-channel Trench MOSFET Rev. 1 11 May 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching ESD protection up

 5.1. Size:1602K  nxp
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NX3008NBKMB

NX3008NBK 30 V, 400 mA N-channel Trench MOSFET Rev. 1 2 August 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching ESD protection up to 2 kV Low t

 5.2. Size:1598K  nxp
 nx3008nbkw.pdf pdf_icon

NX3008NBKMB

NX3008NBKW 30 V, 350 mA N-channel Trench MOSFET Rev. 1 2 August 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching ESD protection up to 2 kV Low thre

 5.3. Size:1606K  nxp
 nx3008nbkv.pdf pdf_icon

NX3008NBKMB

NX3008NBKV 30 V, 400 mA dual N-channel Trench MOSFET Rev. 1 1 August 2011 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching ESD protection

MOSTRAR MÁS

Otros transistores... BUK9Y2R4-40H, BUK9Y2R8-40H, GAN063-650WSA, NX138AK, NX138AKS, NX138BK, NX138BKS, NX138BKW, IRFB3607, NX3008PBKMB, NX3020NAKS, NX3020NAKV, NX3020NAKW, NX6020CAKS, NX7002AKA, NX7002BKH, PMCM4401UNE