All MOSFET. NX3008NBKMB Datasheet

 

NX3008NBKMB Datasheet and Replacement


   Type Designator: NX3008NBKMB
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 0.53 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 6.5 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: SOT883B
 

 NX3008NBKMB substitution

   - MOSFET ⓘ Cross-Reference Search

 

NX3008NBKMB Datasheet (PDF)

 ..1. Size:1649K  nxp
nx3008nbkmb.pdf pdf_icon

NX3008NBKMB

NX3008NBKMB30 V, single N-channel Trench MOSFETRev. 1 11 May 2012 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching ESD protection up

 5.1. Size:1602K  nxp
nx3008nbk.pdf pdf_icon

NX3008NBKMB

NX3008NBK30 V, 400 mA N-channel Trench MOSFETRev. 1 2 August 2011 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching ESD protection up to 2 kV Low t

 5.2. Size:1598K  nxp
nx3008nbkw.pdf pdf_icon

NX3008NBKMB

NX3008NBKW30 V, 350 mA N-channel Trench MOSFETRev. 1 2 August 2011 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching ESD protection up to 2 kV Low thre

 5.3. Size:1606K  nxp
nx3008nbkv.pdf pdf_icon

NX3008NBKMB

NX3008NBKV30 V, 400 mA dual N-channel Trench MOSFETRev. 1 1 August 2011 Product data sheet1. Product profile1.1 General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching ESD protection

Datasheet: BUK9Y2R4-40H , BUK9Y2R8-40H , GAN063-650WSA , NX138AK , NX138AKS , NX138BK , NX138BKS , NX138BKW , AON7506 , NX3008PBKMB , NX3020NAKS , NX3020NAKV , NX3020NAKW , NX6020CAKS , NX7002AKA , NX7002BKH , PMCM4401UNE .

History: IPB60R385CP | BLP04N10-B | RQA0008NXAQS | AM2394NE | 7NM70G-TA3-T | S-LNTK2575LT1G | 2SJ473-01S

Keywords - NX3008NBKMB MOSFET datasheet

 NX3008NBKMB cross reference
 NX3008NBKMB equivalent finder
 NX3008NBKMB lookup
 NX3008NBKMB substitution
 NX3008NBKMB replacement

 

 
Back to Top

 


 
.