PMCXB1000UE MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PMCXB1000UE

Tipo de FET: MOSFET

Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.285 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 0.59 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 7 nS

Cossⓘ - Capacitancia de salida: 5.8 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.67 Ohm

Encapsulados: SOT1216

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PMCXB1000UE datasheet

 ..1. Size:775K  nxp
 pmcxb1000ue.pdf pdf_icon

PMCXB1000UE

PMCXB1000UE 30 V, complementary N/P-channel Trench MOSFET 27 June 2016 Product data sheet 1. General description Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Very low threshold v

 9.1. Size:795K  nxp
 pmcxb900uel.pdf pdf_icon

PMCXB1000UE

PMCXB900UEL 20 V, complementary N/P-channel Trench MOSFET 28 June 2016 Product data sheet 1. General description Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low leakage current Trench MOSFET technology

 9.2. Size:312K  nxp
 pmcxb900ue.pdf pdf_icon

PMCXB1000UE

PMCXB900UE 20 V, complementary N/P-channel Trench MOSFET 30 June 2015 Product data sheet 1. General description Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Very low threshold vo

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