PMCXB1000UE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PMCXB1000UE
Tipo de FET: MOSFET
Polaridad de transistor: NP
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.285 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 0.59 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 7 nS
Cossⓘ - Capacitancia de salida: 5.8 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.67 Ohm
Paquete / Cubierta: SOT1216
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PMCXB1000UE Datasheet (PDF)
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History: SFD025N30C2 | SI4324DY | P0465CS | FQB32N20CTM | SI4122DY | HTD2K4P15T | IRFR5305
History: SFD025N30C2 | SI4324DY | P0465CS | FQB32N20CTM | SI4122DY | HTD2K4P15T | IRFR5305



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