PMCXB1000UE MOSFET. Datasheet pdf. Equivalent

   Type Designator: PMCXB1000UE
   Marking Code: B101
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 0.285 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.95 V
   |Id|ⓘ - Maximum Drain Current: 0.59 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 0.6 nC
   trⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 5.8 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.67 Ohm
   Package: SOT1216

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