PMCXB1000UE Datasheet and Replacement
Type Designator: PMCXB1000UE
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pd ⓘ - Maximum Power Dissipation: 0.285 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 0.59 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 5.8 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.67 Ohm
Package: SOT1216
PMCXB1000UE substitution
PMCXB1000UE Datasheet (PDF)
pmcxb1000ue.pdf
PMCXB1000UE30 V, complementary N/P-channel Trench MOSFET27 June 2016 Product data sheet1. General descriptionComplementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultrasmall DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Trench MOSFET technology Very low threshold v
pmcxb900uel.pdf
PMCXB900UEL20 V, complementary N/P-channel Trench MOSFET28 June 2016 Product data sheet1. General descriptionComplementary N/P-channel enhancement mode Field-Effect Transistor (FET) in aleadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plasticpackage using Trench MOSFET technology.2. Features and benefits Low leakage current Trench MOSFET technology
pmcxb900ue.pdf
PMCXB900UE20 V, complementary N/P-channel Trench MOSFET30 June 2015 Product data sheet1. General descriptionComplementary N/P-channel enhancement mode Field-Effect Transistor (FET) in aleadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plasticpackage using Trench MOSFET technology.2. Features and benefits Trench MOSFET technology Very low threshold vo
Datasheet: PMCM4401UNE , PMCM4401UPE , PMCM4402UPE , PMCM6501UNE , PMCM6501UPE , PMCM6501VNE , PMCM650CUNE , PMCM950ENE , 10N65 , PMCXB900UEL , PMDPB56XNEA , PMDPB95XNE2 , PMDXB600UNEL , PMDXB950UPEL , PMF250XNE , PMF63UNE , PMH1200UPE .
History: PMDPB95XNE2 | MPSP65M650
Keywords - PMCXB1000UE MOSFET datasheet
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History: PMDPB95XNE2 | MPSP65M650
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