PMDXB950UPEL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PMDXB950UPEL

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.265 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 0.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5 nS

Cossⓘ - Capacitancia de salida: 14 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.4 Ohm

Encapsulados: SOT1216

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PMDXB950UPEL datasheet

 ..1. Size:732K  nxp
 pmdxb950upel.pdf pdf_icon

PMDXB950UPEL

PMDXB950UPEL 20 V, dual P-channel Trench MOSFET 28 June 2016 Product data sheet 1. General description Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low leakage current Trench MOSFET technology Leadless ultra s

 3.1. Size:246K  nxp
 pmdxb950upe.pdf pdf_icon

PMDXB950UPEL

PMDXB950UPE 20 V, dual P-channel Trench MOSFET 30 June 2015 Product data sheet 1. General description Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Leadless ultra small and ultra thin SMD pl

 9.1. Size:249K  nxp
 pmdxb600une.pdf pdf_icon

PMDXB950UPEL

PMDXB600UNE 20 V, dual N-channel Trench MOSFET 1 July 2015 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Leadless ultra small and ultra thin SMD pla

 9.2. Size:233K  nxp
 pmdxb1200upe.pdf pdf_icon

PMDXB950UPEL

PMDXB1200UPE 30 V, dual P-channel Trench MOSFET 25 March 2015 Product data sheet 1. General description Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Leadless ultra small and ultra thin SMD pla

MOSTRAR MÁS

Otros transistores... PMCM6501VNE, PMCM650CUNE, PMCM950ENE, PMCXB1000UE, PMCXB900UEL, PMDPB56XNEA, PMDPB95XNE2, PMDXB600UNEL, 20N50, PMF250XNE, PMF63UNE, PMH1200UPE, PMH950UPE, PMN120ENE, PMN120ENEA, PMN16XNE, PMN20ENA