PMDXB950UPEL Specs and Replacement

Type Designator: PMDXB950UPEL

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.265 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 14 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: SOT1216

PMDXB950UPEL substitution

- MOSFET ⓘ Cross-Reference Search

 

PMDXB950UPEL datasheet

 ..1. Size:732K  nxp
 pmdxb950upel.pdf pdf_icon

PMDXB950UPEL

PMDXB950UPEL 20 V, dual P-channel Trench MOSFET 28 June 2016 Product data sheet 1. General description Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low leakage current Trench MOSFET technology Leadless ultra s... See More ⇒

 3.1. Size:246K  nxp
 pmdxb950upe.pdf pdf_icon

PMDXB950UPEL

PMDXB950UPE 20 V, dual P-channel Trench MOSFET 30 June 2015 Product data sheet 1. General description Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Leadless ultra small and ultra thin SMD pl... See More ⇒

 9.1. Size:249K  nxp
 pmdxb600une.pdf pdf_icon

PMDXB950UPEL

PMDXB600UNE 20 V, dual N-channel Trench MOSFET 1 July 2015 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Leadless ultra small and ultra thin SMD pla... See More ⇒

 9.2. Size:233K  nxp
 pmdxb1200upe.pdf pdf_icon

PMDXB950UPEL

PMDXB1200UPE 30 V, dual P-channel Trench MOSFET 25 March 2015 Product data sheet 1. General description Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Leadless ultra small and ultra thin SMD pla... See More ⇒

SHOW MORE

Detailed specifications: PMCM6501VNE, PMCM650CUNE, PMCM950ENE, PMCXB1000UE, PMCXB900UEL, PMDPB56XNEA, PMDPB95XNE2, PMDXB600UNEL, 20N50, PMF250XNE, PMF63UNE, PMH1200UPE, PMH950UPE, PMN120ENE, PMN120ENEA, PMN16XNE, PMN20ENA

Keywords - PMDXB950UPEL MOSFET specs

 PMDXB950UPEL cross reference

 PMDXB950UPEL equivalent finder

 PMDXB950UPEL pdf lookup

 PMDXB950UPEL substitution

 PMDXB950UPEL replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs