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PMN30ENEA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PMN30ENEA
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.667 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5.4 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 2 nS
   Cossⓘ - Capacitancia de salida: 76 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm
   Paquete / Cubierta: TSOP6
 

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PMN30ENEA Datasheet (PDF)

 ..1. Size:258K  nxp
 pmn30enea.pdf pdf_icon

PMN30ENEA

PMN30ENEA40 V N-channel Trench MOSFET2 April 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Logic-level compatible Extended temperature range Tj = 175 C Trench MOSFET technology Ele

 9.1. Size:255K  nxp
 pmn30xpe.pdf pdf_icon

PMN30ENEA

PMN30XPE20 V, P-channel Trench MOSFET16 April 2018 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HB

 9.2. Size:726K  nxp
 pmn30une.pdf pdf_icon

PMN30ENEA

PMN30UNE20 V, N-channel Trench MOSFET29 January 2016 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching Enhanced power dissipa

 9.3. Size:731K  nxp
 pmn30xp.pdf pdf_icon

PMN30ENEA

PMN30XP20 V, P-channel Trench MOSFET23 February 2016 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Trench MOSFET technology Low threshold voltage Enhanced power dissipation capability of 1400 m

MOSTRAR MÁS

Otros transistores... PMN16XNE , PMN20ENA , PMN230ENE , PMN230ENEA , PMN25ENE , PMN25ENEA , PMN280ENEA , PMN28UNE , STP65NF06 , PMN30UN , PMN30UNE , PMN30XP , PMN30XPE , PMN40ENA , PMN40ENE , PMN48XPA , PMN50EPE .

History: SQM25N15-52 | SI4466DY | H05N60F | NCE80T560F | SSM3K04FE | IPD70R600P7S | ME45N03T-G

 

 
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