PMN30ENEA Specs and Replacement

Type Designator: PMN30ENEA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.667 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.4 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2 nS

Cossⓘ - Output Capacitance: 76 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: TSOP6

PMN30ENEA substitution

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PMN30ENEA datasheet

 ..1. Size:258K  nxp
pmn30enea.pdf pdf_icon

PMN30ENEA

PMN30ENEA 40 V N-channel Trench MOSFET 2 April 2019 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface- Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Extended temperature range Tj = 175 C Trench MOSFET technology Ele... See More ⇒

 9.1. Size:255K  nxp
pmn30xpe.pdf pdf_icon

PMN30ENEA

PMN30XPE 20 V, P-channel Trench MOSFET 16 April 2018 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface- Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HB... See More ⇒

 9.2. Size:726K  nxp
pmn30une.pdf pdf_icon

PMN30ENEA

PMN30UNE 20 V, N-channel Trench MOSFET 29 January 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching Enhanced power dissipa... See More ⇒

 9.3. Size:731K  nxp
pmn30xp.pdf pdf_icon

PMN30ENEA

PMN30XP 20 V, P-channel Trench MOSFET 23 February 2016 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Low threshold voltage Enhanced power dissipation capability of 1400 m... See More ⇒

Detailed specifications: PMN16XNE, PMN20ENA, PMN230ENE, PMN230ENEA, PMN25ENE, PMN25ENEA, PMN280ENEA, PMN28UNE, IRFZ46N, PMN30UN, PMN30UNE, PMN30XP, PMN30XPE, PMN40ENA, PMN40ENE, PMN48XPA, PMN50EPE

Keywords - PMN30ENEA MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.