PMN30ENEA MOSFET. Datasheet pdf. Equivalent
Type Designator: PMN30ENEA
Marking Code: 3Q
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.667 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 5.4 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 7.8 nC
trⓘ - Rise Time: 2 nS
Cossⓘ - Output Capacitance: 76 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: TSOP6
PMN30ENEA Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PMN30ENEA Datasheet (PDF)
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