PMN30ENEA Specs and Replacement
Type Designator: PMN30ENEA
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.667 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5.4 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 2 nS
Cossⓘ - Output Capacitance: 76 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: TSOP6
PMN30ENEA substitution
- MOSFET ⓘ Cross-Reference Search
PMN30ENEA datasheet
pmn30enea.pdf
PMN30ENEA 40 V N-channel Trench MOSFET 2 April 2019 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface- Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Extended temperature range Tj = 175 C Trench MOSFET technology Ele... See More ⇒
pmn30xpe.pdf
PMN30XPE 20 V, P-channel Trench MOSFET 16 April 2018 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface- Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HB... See More ⇒
pmn30une.pdf
PMN30UNE 20 V, N-channel Trench MOSFET 29 January 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching Enhanced power dissipa... See More ⇒
pmn30xp.pdf
PMN30XP 20 V, P-channel Trench MOSFET 23 February 2016 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Low threshold voltage Enhanced power dissipation capability of 1400 m... See More ⇒
Detailed specifications: PMN16XNE, PMN20ENA, PMN230ENE, PMN230ENEA, PMN25ENE, PMN25ENEA, PMN280ENEA, PMN28UNE, IRFZ46N, PMN30UN, PMN30UNE, PMN30XP, PMN30XPE, PMN40ENA, PMN40ENE, PMN48XPA, PMN50EPE
Keywords - PMN30ENEA MOSFET specs
PMN30ENEA cross reference
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PMN30ENEA substitution
PMN30ENEA replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
